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Results: 1-13 |
Results: 13
MITATT MODE IN GAAS DDR WITH DIFFERENT CRYSTAL ORIENTATIONS
Authors: MISHRA JK DASH GN
Citation: Jk. Mishra et Gn. Dash, MITATT MODE IN GAAS DDR WITH DIFFERENT CRYSTAL ORIENTATIONS, Indian Journal of Pure & Applied Physics, 36(1), 1998, pp. 5-12
DESIGN OPTIMIZATION OF A SINGLE-SIDED SI SIGE HETEROSTRUCTURE MIXED TUNNELING AVALANCHE TRANSIT-TIME DOUBLE DRIFT REGION/
Authors: MISHRA JK PANDA AK DASH GN
Citation: Jk. Mishra et al., DESIGN OPTIMIZATION OF A SINGLE-SIDED SI SIGE HETEROSTRUCTURE MIXED TUNNELING AVALANCHE TRANSIT-TIME DOUBLE DRIFT REGION/, Semiconductor science and technology, 12(12), 1997, pp. 1635-1640
STUDIES ON THE MICROWAVE PROPERTIES OF LIMITED SOURCE DIFFUSION-BASEDSILICON SDRS
Authors: PANDA AK SATAPATHY S DASH GN PATI SP
Citation: Ak. Panda et al., STUDIES ON THE MICROWAVE PROPERTIES OF LIMITED SOURCE DIFFUSION-BASEDSILICON SDRS, Indian Journal of Pure & Applied Physics, 35(12), 1997, pp. 749-755
AN EXTREMELY LOW-NOISE HETEROJUNCTION IMPATT
Authors: MISHRA JK PANDA AK DASH GN
Citation: Jk. Mishra et al., AN EXTREMELY LOW-NOISE HETEROJUNCTION IMPATT, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2143-2148
COMPUTER-AIDED OPTIMIZATION OF ION-IMPLANTATION IMPURITY PROFILES FORN(+)NPP(+) DOUBLE DRIFT IMPATT DIODES WITH 3 MOMENT APPROACH
Authors: PANDA AK DASH GN PATI SP
Citation: Ak. Panda et al., COMPUTER-AIDED OPTIMIZATION OF ION-IMPLANTATION IMPURITY PROFILES FORN(+)NPP(+) DOUBLE DRIFT IMPATT DIODES WITH 3 MOMENT APPROACH, Solid-state electronics, 39(5), 1996, pp. 759-762
NOISE IN MIXED TUNNELING AVALANCHE TRANSIT-TIME (MITATT) DIODES
Authors: DASH GN MISHRA JK PANDA AK
Citation: Gn. Dash et al., NOISE IN MIXED TUNNELING AVALANCHE TRANSIT-TIME (MITATT) DIODES, Solid-state electronics, 39(10), 1996, pp. 1473-1479
COMPUTER-AIDED REALIZATION OF DIFFUSION-BASED SI N(+)NPP(+) DOUBLE DRIFT DOPING PROFILES AND STUDIES ON THEIR MICROWAVE PROPERTIES
Authors: PANDA AK DASH GN SATAPATHY S PATI SP
Citation: Ak. Panda et al., COMPUTER-AIDED REALIZATION OF DIFFUSION-BASED SI N(+)NPP(+) DOUBLE DRIFT DOPING PROFILES AND STUDIES ON THEIR MICROWAVE PROPERTIES, Physica status solidi. a, Applied research, 154(2), 1996, pp. 657-667
COMPUTER-AIDED STUDIES ON THE WIDE-BAND MICROWAVE CHARACTERISTICS OF A SILICON DOUBLE AVALANCHE REGION (DAR) DIODE
Authors: PANDA AK DASH GN PATI SP
Citation: Ak. Panda et al., COMPUTER-AIDED STUDIES ON THE WIDE-BAND MICROWAVE CHARACTERISTICS OF A SILICON DOUBLE AVALANCHE REGION (DAR) DIODE, Semiconductor science and technology, 10(6), 1995, pp. 854-864
A NEW DESIGN APPROACH FOR MITATT AND TUNNETT MODE DEVICES
Authors: DASH GN
Citation: Gn. Dash, A NEW DESIGN APPROACH FOR MITATT AND TUNNETT MODE DEVICES, Solid-state electronics, 38(7), 1995, pp. 1381-1385
STUDIES ON THE PROSPECTS OF GAINAS AND GAINASP FOR DOUBLE-DRIFT REGION HETEROSTRUCTURE IMPATTS
Authors: DASH GN PATI SP
Citation: Gn. Dash et Sp. Pati, STUDIES ON THE PROSPECTS OF GAINAS AND GAINASP FOR DOUBLE-DRIFT REGION HETEROSTRUCTURE IMPATTS, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 211-217
EFFECT OF THE DIFFUSION IMPURITY PROFILE ON THE MICROWAVE PROPERTIES OF SILICON P(+)NN(+) IMPATT DIODES
Authors: PANDA AK DASH GN PATI SP
Citation: Ak. Panda et al., EFFECT OF THE DIFFUSION IMPURITY PROFILE ON THE MICROWAVE PROPERTIES OF SILICON P(+)NN(+) IMPATT DIODES, Semiconductor science and technology, 9(3), 1994, pp. 241-248
COMPUTER-AIDED STUDIES ON THE MICROWAVE CHARACTERISTICS OF INP GAINASAND GAAS GAINAS HETEROSTRUCTURE SINGLE-DRIFT-REGION IMPACT AVALANCHE TRANSIT-TIME DIODES
Authors: DASH GN PATI SP
Citation: Gn. Dash et Sp. Pati, COMPUTER-AIDED STUDIES ON THE MICROWAVE CHARACTERISTICS OF INP GAINASAND GAAS GAINAS HETEROSTRUCTURE SINGLE-DRIFT-REGION IMPACT AVALANCHE TRANSIT-TIME DIODES, Journal of physics. D, Applied physics, 27(8), 1994, pp. 1719-1726
SMALL-SIGNAL COMPUTER-SIMULATION OF IMPATT DIODES INCLUDING CARRIER DIFFUSION
Authors: DASH GN PATI SP
Citation: Gn. Dash et Sp. Pati, SMALL-SIGNAL COMPUTER-SIMULATION OF IMPATT DIODES INCLUDING CARRIER DIFFUSION, Semiconductor science and technology, 6(5), 1991, pp. 348-355
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