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Results: 1-7 |
Results: 7
ADVANCED THIN-FILM SILICON-ON-SAPPHIRE TECHNOLOGY - MICROWAVE CIRCUITAPPLICATIONS
Authors: JOHNSON RA DELAHOUSSAYE PR CHANG CE CHEN PF WOOD ME GARCIA GA LAGNADO I ASBECK PM
Citation: Ra. Johnson et al., ADVANCED THIN-FILM SILICON-ON-SAPPHIRE TECHNOLOGY - MICROWAVE CIRCUITAPPLICATIONS, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1047-1054
A 2.4-GHZ SILICON-ON-SAPPHIRE CMOS LOW-NOISE AMPLIFIER
Authors: JOHNSON RA CHANG CE DELAHOUSSAYE PR WOOD ME GARCIA GA ASBECK PM LAGNADO I
Citation: Ra. Johnson et al., A 2.4-GHZ SILICON-ON-SAPPHIRE CMOS LOW-NOISE AMPLIFIER, IEEE microwave and guided wave letters, 7(10), 1997, pp. 350-352
SILICON-ON-SAPPHIRE MOSFET TRANSMIT RECEIVE SWITCH FOR L-BAND AND S-BAND TRANSCEIVER APPLICATIONS/
Authors: JOHNSON RA DELAHOUSSAYE PR WOOD ME GARCIA GA CHANG CE ASBECK PM LAGNADO I
Citation: Ra. Johnson et al., SILICON-ON-SAPPHIRE MOSFET TRANSMIT RECEIVE SWITCH FOR L-BAND AND S-BAND TRANSCEIVER APPLICATIONS/, Electronics Letters, 33(15), 1997, pp. 1324-1326
MICROWAVE PERFORMANCE OF OPTICALLY FABRICATED T-GATE THIN-FILM SILICON-ON-SAPPHIRE BASED MOSFETS
Authors: DELAHOUSSAYE PR CHANG CE OFFORD B IMTHURN G JOHNSON R ASBECK PM GARCIA GA LAGNADO I
Citation: Pr. Delahoussaye et al., MICROWAVE PERFORMANCE OF OPTICALLY FABRICATED T-GATE THIN-FILM SILICON-ON-SAPPHIRE BASED MOSFETS, IEEE electron device letters, 16(6), 1995, pp. 289-292
THE EFFECTS OF MICROCRYSTALLINE STRUCTURE ON THE PHOTOLUMINESCENCE OFPOROUS SILICON-ON-SAPPHIRE
Authors: RUSSELL SD DUBBELDAY WB GEORGIEF P SHIMABUKURO RL DELAHOUSSAYE PR
Citation: Sd. Russell et al., THE EFFECTS OF MICROCRYSTALLINE STRUCTURE ON THE PHOTOLUMINESCENCE OFPOROUS SILICON-ON-SAPPHIRE, Journal of applied physics, 76(10), 1994, pp. 6012-6013
DEMONSTRATION OF MONOLITHIC CO-FABRICATION OF Y1BA2CU3O7-DELTA AND CMOS DEVICES ON THE SAME SAPPHIRE SUBSTRATE
Authors: DELAHOUSSAYE PR BURNS MJ RUBY WJ RUSSELL SD CLAYATON SR GARCIA GA LEE LP
Citation: Pr. Delahoussaye et al., DEMONSTRATION OF MONOLITHIC CO-FABRICATION OF Y1BA2CU3O7-DELTA AND CMOS DEVICES ON THE SAME SAPPHIRE SUBSTRATE, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2139-2140
DEMONSTRATION OF Y1BA2CU3O7-DELTA AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION ON THE SAME SAPPHIRE SUBSTRATE
Authors: BURNS MJ DELAHOUSSAYE PR RUSSELL SD GARCIA GA CLAYTON SR RUBY WS LEE LP
Citation: Mj. Burns et al., DEMONSTRATION OF Y1BA2CU3O7-DELTA AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION ON THE SAME SAPPHIRE SUBSTRATE, Applied physics letters, 63(9), 1993, pp. 1282-1284
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