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Results: 1-25/27
Authors:
GRANDIDIER B
NYS JP
STIEVENARD D
DELABROISE X
DELERUE C
LANNOO M
Citation: B. Grandidier et al., STM MEASUREMENTS OF BARRIER HEIGHT ON SI(111)-7X7 AND GAAS(110) CLEAVED SURFACES USING I(Z), Z(V) AND I(Z(V),V) TECHNIQUES, Applied physics A: Materials science & processing, 66, 1998, pp. 977-980
Authors:
LAMPIN E
DELERUE C
LANNOO M
ALLAN G
Citation: E. Lampin et al., FREQUENCY-DEPENDENT HOPPING CONDUCTIVITY BETWEEN SILICON NANOCRYSTALLITES - APPLICATION TO POROUS SILICON, Physical review. B, Condensed matter, 58(18), 1998, pp. 12044-12048
Authors:
CHAMARRO M
DIB M
VOLIOTIS V
FILORAMO A
ROUSSIGNOL P
GACOIN T
BOILOT JP
DELERUE C
ALLAN G
LANNOO M
Citation: M. Chamarro et al., INTERPLAY OF COULOMB, EXCHANGE, AND SPIN-ORBIT EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review. B, Condensed matter, 57(7), 1998, pp. 3729-3732
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., ELECTRONIC-STRUCTURE AND LOCALIZED STATES IN A MODEL AMORPHOUS-SILICON, Physical review. B, Condensed matter, 57(12), 1998, pp. 6933-6936
Authors:
STIEVENARD D
GRANDIDIER B
NYS JP
DELABROISE X
DELERUE C
LANNOO M
Citation: D. Stievenard et al., INFLUENCE OF BARRIER HEIGHT ON SCANNING TUNNELING SPECTROSCOPY EXPERIMENTAL AND THEORETICAL ASPECTS, Applied physics letters, 72(5), 1998, pp. 569-571
Authors:
DELERUE C
LANNOO M
ALLAN G
Citation: C. Delerue et al., CALCULATIONS OF THE ELECTRON-ENERGY-LOSS SPECTRA OF SILICON NANOSTRUCTURES AND POROUS SILICON, Physical review. B, Condensed matter, 56(23), 1997, pp. 15306-15313
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON NANOCLUSTERS, Physical review letters, 78(16), 1997, pp. 3161-3164
Authors:
DELABROISE X
LANNOO M
DELERUE C
Citation: X. Delabroise et al., VIRTUAL CHARGE METHOD FOR ELECTROSTATIC CALCULATIONS IN METALLIC TIP AND SEMICONDUCTING SAMPLE SYSTEMS, Journal of applied physics, 82(11), 1997, pp. 5589-5596
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., QUANTUM CONFINEMENT IN AMORPHOUS-SILICON LAYERS, Applied physics letters, 71(9), 1997, pp. 1189-1191
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., QUANTUM CONFINEMENT IN THE SI-III (BC-8) PHASE OF POROUS SILICON, Applied physics letters, 70(18), 1997, pp. 2437-2439
Authors:
PRIESTER C
DELERUE C
Citation: C. Priester et C. Delerue, PROCEEDINGS OF THE 15TH EUROPEAN CONFERENCE ON SURFACE SCIENCE - LILLE, FRANCE, 4-8 SEPTEMBER 1995 - PREFACE, Surface science, 352, 1996, pp. 7-7
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., NATURE OF LUMINESCENT SURFACE-STATES OF SEMICONDUCTOR NANOCRYSTALLITES, Physical review letters, 76(16), 1996, pp. 2961-2964
Authors:
DELERUE C
LANNOO M
ALLAN G
Citation: C. Delerue et al., SIZE DEPENDENCE OF EXCITONS IN SILICON NANOCRYSTALS - COMMENT, Physical review letters, 76(16), 1996, pp. 3038-3038
Authors:
LANNOO M
DELERUE C
ALLAN G
Citation: M. Lannoo et al., THEORY OF RADIATIVE AND NONRADIATIVE-TRANSITIONS FOR SEMICONDUCTOR NANOCRYSTALS, Journal of luminescence, 70, 1996, pp. 170-184
HYDROGENIC IMPURITY LEVELS, DIELECTRIC-CONSTANT, AND COULOMB CHARGINGEFFECTS IN SILICON CRYSTALLITES
Authors:
ALLAN G
DELERUE C
LANNOO M
MARTIN E
Citation: G. Allan et al., HYDROGENIC IMPURITY LEVELS, DIELECTRIC-CONSTANT, AND COULOMB CHARGINGEFFECTS IN SILICON CRYSTALLITES, Physical review. B, Condensed matter, 52(16), 1995, pp. 11982-11988
Authors:
MIHALCESCU I
VIAL JC
BSIESY A
MULLER F
ROMESTAIN R
MARTIN E
DELERUE C
LANNOO M
ALLAN G
Citation: I. Mihalcescu et al., SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT, Physical review. B, Condensed matter, 51(24), 1995, pp. 17605-17613
Authors:
DELERUE C
LANNOO M
ALLAN G
MARTIN E
Citation: C. Delerue et al., THEORETICAL DESCRIPTIONS OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 27-34
Authors:
DELERUE C
LANNOO M
ALLAN G
MARTIN E
MIHALCESCU I
VIAL JC
ROMESTAIN R
MULLER F
BSIESY A
Citation: C. Delerue et al., AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review letters, 75(11), 1995, pp. 2228-2231
Authors:
LANNOO M
DELERUE C
ALLAN G
Citation: M. Lannoo et al., SCREENING IN SEMICONDUCTOR NANOCRYSTALLITES AND ITS CONSEQUENCES FOR POROUS SILICON, Physical review letters, 74(17), 1995, pp. 3415-3418
Authors:
LANNOO M
DELERUE C
ALLAN G
MARTIN E
Citation: M. Lannoo et al., THEORY OF PHYSICAL-PROPERTIES OF SILICON CRYSTALLITES, Annales de physique, 20(3), 1995, pp. 271-276
Authors:
MARTIN E
DELERUE C
ALLAN G
LANNOO M
Citation: E. Martin et al., THEORY OF EXCITONIC EXCHANGE SPLITTING AND OPTICAL STOKES SHIFT IN SILICON NANOCRYSTALLITES - APPLICATION TO POROUS SILICON, Physical review. B, Condensed matter, 50(24), 1994, pp. 18258-18267
Authors:
DELERUE C
MARTIN E
LAMPIN JF
ALLAN G
LANNOO M
Citation: C. Delerue et al., LUMINESCENCE OF SILICON CRYSTALLITES, Journal de physique. IV, 3(C5), 1993, pp. 359-362
Authors:
DELERUE C
ALLAN G
LANNOO M
Citation: C. Delerue et al., THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON, Physical review. B, Condensed matter, 48(15), 1993, pp. 11024-11036
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., THEORY OF OPTICAL-PROPERTIES OF POLYSILANES - COMPARISON WITH POROUS SILICON, Physical review. B, Condensed matter, 48(11), 1993, pp. 7951-7959
Authors:
ALLAN G
DELERUE C
LANNOO M
Citation: G. Allan et al., EXCITONS IN SILICON NANOSTRUCTURES, Journal of luminescence, 57(1-6), 1993, pp. 239-242