ACNP - Italian Periodicals Catalogue

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Results: 1-24 |

Results: 24

GROWTH AND CHARACTERIZATION OF II-VI BLUE-LIGHT-EMITTING DIODES USINGSHORT-PERIOD SUPERLATTICES

Authors: WU BJ KUO LH DEPUYDT JM HAUGEN GM HAASE MA SALAMANCARIBA L

Citation: Bj. Wu et al., GROWTH AND CHARACTERIZATION OF II-VI BLUE-LIGHT-EMITTING DIODES USINGSHORT-PERIOD SUPERLATTICES, Applied physics letters, 68(3), 1996, pp. 379-381

MOLECULAR-BEAM EPITAXY OF LOW DEFECT DENSITY (LESS-THAN-OR-EQUAL-TO-1X10(4)CM(-2)) ZNSSE ON GAAS

Authors: WU BJ HAUGEN GM DEPUYDT JM KUO LH SALAMANCARIBA L

Citation: Bj. Wu et al., MOLECULAR-BEAM EPITAXY OF LOW DEFECT DENSITY (LESS-THAN-OR-EQUAL-TO-1X10(4)CM(-2)) ZNSSE ON GAAS, Applied physics letters, 68(20), 1996, pp. 2828-2830

GENERATION OF DEGRADATION DEFECTS, STACKING-FAULTS, AND MISFIT DISLOCATIONS IN ZNSE-BASED FILMS GROWN ON GAAS

Authors: KUO LH SALAMANCARIBA L WU BJ HAUGEN GM DEPUYDT JM HOFLER G CHENG H

Citation: Lh. Kuo et al., GENERATION OF DEGRADATION DEFECTS, STACKING-FAULTS, AND MISFIT DISLOCATIONS IN ZNSE-BASED FILMS GROWN ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1694-1704

MISFIT STRAIN-INDUCED TWEED-TWIN TRANSFORMATION ON COMPOSITION MODULATION ZN1-XMGXSYSE1-Y LAYERS AND THE QUALITY-CONTROL OF THE ZNSE BUFFERGAAS INTERFACE

Authors: KUO LH SALAMANCARIBA L WU BJ DEPUYDT JM

Citation: Lh. Kuo et al., MISFIT STRAIN-INDUCED TWEED-TWIN TRANSFORMATION ON COMPOSITION MODULATION ZN1-XMGXSYSE1-Y LAYERS AND THE QUALITY-CONTROL OF THE ZNSE BUFFERGAAS INTERFACE, Journal of electronic materials, 24(3), 1995, pp. 155-162

SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES

Authors: WU BJ DEPUYDT JM HAUGEN GM HAASE MA

Citation: Bj. Wu et al., SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES, Electronics Letters, 31(12), 1995, pp. 1015-1016

DEPENDENCE OF THE DENSITY AND TYPE OF STACKING-FAULTS ON THE SURFACE-TREATMENT OF THE SUBSTRATE AND GROWTH MODE IN ZNSXSE1-X ZNSE BUFFER LAYER GAAS HETEROSTRUCTURES/

Authors: KUO LH SALAMANCARIBA L WU BJ HOFLER G DEPUYDT JM CHENG H

Citation: Lh. Kuo et al., DEPENDENCE OF THE DENSITY AND TYPE OF STACKING-FAULTS ON THE SURFACE-TREATMENT OF THE SUBSTRATE AND GROWTH MODE IN ZNSXSE1-X ZNSE BUFFER LAYER GAAS HETEROSTRUCTURES/, Applied physics letters, 67(22), 1995, pp. 3298-3300

PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS

Authors: HAUGEN GM GUHA S CHENG H DEPUYDT JM HAASE MA HOFLER GE QIU J WU BJ

Citation: Gm. Haugen et al., PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS, Applied physics letters, 66(3), 1995, pp. 358-360

WIDE-BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR-BEAM EPITAXY

Authors: WU BJ DEPUYDT JM HAUGEN GM HOFLER GE HAASE MA CHENG H GUHA S QIU J KUO LH SALAMANCARIBA L

Citation: Bj. Wu et al., WIDE-BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(25), 1995, pp. 3462-3464

FAILURE MECHANISMS IN II-VI BLUE-GREEN EMITTERS

Authors: GUHA S CHENG H DEPUYDT JM HAASE MA QIU J

Citation: S. Guha et al., FAILURE MECHANISMS IN II-VI BLUE-GREEN EMITTERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 29-35

DISLOCATION NUCLEATION MECHANISM AND DOPING EFFECT IN P-TYPE ZNSE GAAS/

Authors: KUO LH SALAMANCARIBA L DEPUYDT JM CHENG H QIU J

Citation: Lh. Kuo et al., DISLOCATION NUCLEATION MECHANISM AND DOPING EFFECT IN P-TYPE ZNSE GAAS/, Journal of electronic materials, 23(3), 1994, pp. 275-281

DISLOCATION NUCLEATION MECHANISM IN NITROGEN-DOPED ZNSE GAAS

Authors: KUO LH SALAMANCARIBA L DEPUYDT JM CHENG H QIU J

Citation: Lh. Kuo et al., DISLOCATION NUCLEATION MECHANISM IN NITROGEN-DOPED ZNSE GAAS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(2), 1994, pp. 301-313

BLUE-GREEN DIODE-LASERS

Authors: NEUMARK GF PARK RM DEPUYDT JM

Citation: Gf. Neumark et al., BLUE-GREEN DIODE-LASERS, Physics today, 47(6), 1994, pp. 26-32

ROOM-TEMPERATURE II-VI LASERS WITH 2.5 MA THRESHOLD

Authors: DEPUYDT JM HAASE MA GUHA S QIU J CHENG H WU BJ HOFLER GE MEISHAUGEN G HAGEDORN MS BAUDE PF

Citation: Jm. Depuydt et al., ROOM-TEMPERATURE II-VI LASERS WITH 2.5 MA THRESHOLD, Journal of crystal growth, 138(1-4), 1994, pp. 667-676

(100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS

Authors: GUHA S CHENG H HAASE MA DEPUYDT JM QIU J WU BJ HOFLER GE

Citation: S. Guha et al., (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS, Applied physics letters, 65(7), 1994, pp. 801-803

COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFERLAYER GAAS HETEROSTRUCTURES

Authors: KUO LH SALAMANCARIBA L WU BJ DEPUYDT JM HAUGEN GM CHENG H GUHA S HAASE MA

Citation: Lh. Kuo et al., COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFERLAYER GAAS HETEROSTRUCTURES, Applied physics letters, 65(10), 1994, pp. 1230-1232

BLUE-GREEN II-VI LASER-DIODES

Authors: WALKER CT DEPUYDT JM HAASE MA QIU J CHENG H

Citation: Ct. Walker et al., BLUE-GREEN II-VI LASER-DIODES, Physica. B, Condensed matter, 185(1-4), 1993, pp. 27-35

RECENT DEVELOPMENTS IN THE MBE GROWTH OF WIDE BANDGAP II-VI SEMICONDUCTORS FOR LASER-DIODES AND LEDS

Authors: QIU J CHENG H DEPUYDT JM HAASE MA

Citation: J. Qiu et al., RECENT DEVELOPMENTS IN THE MBE GROWTH OF WIDE BANDGAP II-VI SEMICONDUCTORS FOR LASER-DIODES AND LEDS, Journal of crystal growth, 127(1-4), 1993, pp. 279-286

IIB-8 BLUE-GREEN BURIED-RIDGE LASER-DIODES

Authors: HAASE MA BAUDE PF HAGEDORN MS QUI J DEPUYDT JM CHENG H GUHA S HOFLER GE WU BJ

Citation: Ma. Haase et al., IIB-8 BLUE-GREEN BURIED-RIDGE LASER-DIODES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2110

DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS

Authors: GUHA S DEPUYDT JM HAASE MA QIU J CHENG H

Citation: S. Guha et al., DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS, Applied physics letters, 63(23), 1993, pp. 3107-3109

MISFIT DISLOCATION NUCLEATION IN DOPED AND UNDOPED ZNSE GAAS/

Authors: KUO LH SALAMANCARIBA L DEPUYDT JM CHENG H QIU J

Citation: Lh. Kuo et al., MISFIT DISLOCATION NUCLEATION IN DOPED AND UNDOPED ZNSE GAAS/, Applied physics letters, 63(23), 1993, pp. 3197-3199

ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES

Authors: GUHA S DEPUYDT JM QIU J HOFLER GE HAASE MA WU BJ CHENG H

Citation: S. Guha et al., ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES, Applied physics letters, 63(22), 1993, pp. 3023-3025

MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDZNS USING ELEMENTAL SOURCES

Authors: WU BJ CHENG H GUHA S HAASE MA DEPUYDT JM MEISHAUGEN G QIU J

Citation: Bj. Wu et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDZNS USING ELEMENTAL SOURCES, Applied physics letters, 63(21), 1993, pp. 2935-2937

LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES

Authors: HAASE MA BAUDE PF HAGEDORN MS QIU J DEPUYDT JM CHENG H GUHA S HOFLER GE WU BJ

Citation: Ma. Haase et al., LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES, Applied physics letters, 63(17), 1993, pp. 2315-2317

MICROSTRUCTURE AND PSEUDOMORPHISM IN MOLECULAR-BEAM EPITAXIALLY GROWNZNCDS ON GAAS(001)

Authors: GUHA S WU BJ CHENG H DEPUYDT JM

Citation: S. Guha et al., MICROSTRUCTURE AND PSEUDOMORPHISM IN MOLECULAR-BEAM EPITAXIALLY GROWNZNCDS ON GAAS(001), Applied physics letters, 63(15), 1993, pp. 2129-2131

Risultati: 1-24 |