AAAAAA
Results:
1-7
|
Results: 7
Authors:
VANOLMEN J
MANCA JV
DECEUNINCK W
DESCHEPPER L
DHAEGER V
WITVROUW A
MAEX K
Citation: J. Vanolmen et al., OVERVIEW OF THE KINETICS OF THE EARLY STAGES OF ELECTROMIGRATION UNDER LOW (= REALISTIC) CURRENT-DENSITY STRESS, Microelectronics and reliability, 38(6-8), 1998, pp. 1009-1013
Authors:
MANCA JV
CROES K
DECEUNINCK W
DHAEGER V
DHAEN J
DEPAUW P
TIELEMANS L
DESCHEPPER L
Citation: Jv. Manca et al., LOCALIZED MONITORING OF ELECTROMIGRATION WITH EARLY RESISTANCE CHANGEMEASUREMENTS, Microelectronics and reliability, 38(4), 1998, pp. 641-650
Authors:
DECEUNINCK WA
DHAEGER V
VANOLMEN J
WITVROUW A
MAEX K
DESCHEPPER L
DEPAUW P
PERGOOT A
Citation: Wa. Deceuninck et al., THE INFLUENCE OF ADDITION ELEMENTS ON THE EARLY RESISTANCE CHANGES OBSERVED DURING ELECTROMIGRATION TESTING OF AL METAL LINES, Microelectronics and reliability, 38(1), 1998, pp. 87-98
Authors:
DECEUNINCK W
MANCA J
DHAEGER V
VANOLMEN J
DESCHEPPER L
STALS LM
Citation: W. Deceuninck et al., DESIGN OF A NEW TEST STRUCTURE FOR THE STUDY OF ELECTROMIGRATION WITHEARLY RESISTANCE CHANGE MEASUREMENTS, Microelectronics and reliability, 37(12), 1997, pp. 1813-1816
Authors:
DHAEGER V
DECEUNINCK W
KNUYT G
DESCHEPPER L
STALS LM
Citation: V. Dhaeger et al., A NEW TECHNIQUE TO CHARACTERIZE THE EARLY STAGES OF ELECTROMIGRATION-INDUCED RESISTANCE CHANGES AT LOW CURRENT DENSITIES, Microelectronics and reliability, 36(11-12), 1996, pp. 1695-1698
Authors:
SCORZONI A
DEMUNARI I
STULENS H
DHAEGER V
Citation: A. Scorzoni et al., NONLINEAR RESISTANCE BEHAVIOR IN THE EARLY STAGES AND AFTER ELECTROMIGRATION IN AL-SI LINES, Journal of applied physics, 80(1), 1996, pp. 143-150
Authors:
VANHECKE B
DESCHEPPER L
DECEUNINCK W
DHAEGER V
DOLIESLAEGERS M
BEYNE E
ROGGEN J
STALS L
Citation: B. Vanhecke et al., ELECTROMIGRATION - INVESTIGATION OF HETEROGENEOUS SYSTEMS, Microelectronics and reliability, 33(8), 1993, pp. 1141-1157
Risultati:
1-7
|