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Results:
1-12
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Results: 12
Authors:
AGGARWAL S
PRAKASH AS
SONG TK
SADASHIVAN S
DHOTE AM
YANG B
RAMESH R
KISLER Y
BERNACKI SE
Citation: S. Aggarwal et al., LEAD-BASED FERROELECTRIC CAPACITORS FOR LOW-VOLTAGE NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics, 19(1-4), 1998, pp. 159-177
Authors:
AGGARWAL S
SONG TK
DHOTE AM
PRAKASH AS
RAMESH R
VELASQUEZ N
BOYER L
EVANS JT
Citation: S. Aggarwal et al., INFLUENCE OF CATIONIC STOICHIOMETRY OF LA1-XSRXCOO3 ELECTRODES ON THEFERROELECTRIC PROPERTIES OF LEAD-BASED THIN-FILM MEMORY ELEMENTS, Journal of applied physics, 83(3), 1998, pp. 1617-1624
Authors:
IM J
KRAUSS AR
DHOTE AM
GRUEN DM
AUCIELLO O
RAMESH R
CHANG RPH
Citation: J. Im et al., STUDIES OF METALLIC SPECIES AND OXYGEN INCORPORATION DURING SPUTTER-DEPOSITION OF SRBI2TA2O9 FILMS, USING MASS-SPECTROSCOPY OF RECOILED IONS, Applied physics letters, 72(20), 1998, pp. 2529-2531
Authors:
DHOTE AM
MADHUKAR S
YOUNG D
VENKATESAN T
RAMESH R
COTELL CM
BENEDETTO JM
Citation: Am. Dhote et al., LOW-TEMPERATURE GROWTH AND RELIABILITY OF FERROELECTRIC MEMORY CELL INTEGRATED ON SI WITH CONDUCTING BARRIER STACK, Journal of materials research, 12(6), 1997, pp. 1589-1594
Authors:
MADHUKAR S
AGGARWAL S
DHOTE AM
RAMESH R
KRISHNAN A
KEEBLE D
POINDEXTER E
Citation: S. Madhukar et al., EFFECT OF OXYGEN STOICHIOMETRY ON THE ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 ELECTRODES, Journal of applied physics, 81(8), 1997, pp. 3543-3547
Authors:
YANG B
AGGARWAL S
DHOTE AM
SONG TK
RAMESH R
LEE JS
Citation: B. Yang et al., LA0.5SR0.5COO3 PB(NB0.04ZR0.28TI0.68)O-3/LA0.5SR0.5COO3 THIN-FILM HETEROSTRUCTURES ON SI USING TIN/PT CONDUCTING BARRIER/, Applied physics letters, 71(3), 1997, pp. 356-358
Authors:
WEI W
DHOTE AM
RAMESH R
SAUVAGE S
Citation: W. Wei et al., RELIABILITY STUDIES OF POLYCRYSTALLINE LA-SR-CO-O PB-LA-ZR-TI-O/LA-SR-CO-O CAPACITORS ON SILICON/, Integrated ferroelectrics, 12(1), 1996, pp. 53-62
Authors:
LIMAYE AV
NARHE RD
DHOTE AM
OGALE SB
Citation: Av. Limaye et al., EVIDENCE FOR CONVECTIVE EFFECTS IN BREATH FIGURE FORMATION ON VOLATILE FLUID SURFACES, Physical review letters, 76(20), 1996, pp. 3762-3765
Authors:
AGGARWAL S
DHOTE AM
RAMESH R
WARREN WL
PIKE GE
DIMOS D
RAYMOND MV
TUTTLE BA
EVANS JT
Citation: S. Aggarwal et al., HYSTERESIS RELAXATION IN (PB,LA)(ZR,TI)O-3 THIN-FILM CAPACITORS WITH (LA,SR)COO3 ELECTRODES, Applied physics letters, 69(17), 1996, pp. 2540-2542
Authors:
DHOTE AM
MADHUKAR S
WEI W
VENKATESAN T
RAMESH R
COTELL CM
Citation: Am. Dhote et al., DIRECT INTEGRATION OF FERROELECTRIC LA-SR-CO-O PB-NB-ZR-TI-O/LA-SR-CO-O CAPACITORS ON SILICON WITH CONDUCTING BARRIER LAYERS/, Applied physics letters, 68(10), 1996, pp. 1350-1352
Authors:
DHOTE AM
SHREEKALA R
PATIL SI
OGALE SB
VENKATESAN T
WILLIAMS CM
Citation: Am. Dhote et al., PULSED EXCIMER-LASER ETCHING OF LA0.75CA0.25MNOX THIN-FILMS, Applied physics letters, 67(24), 1995, pp. 3644-3646
Authors:
DHOTE AM
OGALE SB
Citation: Am. Dhote et Sb. Ogale, DEPOSITION OF TUNGSTEN FILMS BY PULSED EXCIMER-LASER ABLATION TECHNIQUE, Applied physics letters, 64(21), 1994, pp. 2809-2811
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