Citation: F. Berizzi et M. Diani, MULTIPATH EFFECTS ON ISAR IMAGE-RECONSTRUCTION, IEEE transactions on aerospace and electronic systems, 34(2), 1998, pp. 645-653
Citation: M. Diani et al., GROUND CLUTTER MODEL FOR AIRBORNE MPRF RADARS IN LOOK-DOWN SEARCH MODE, IEE proceedings. Radar, sonar and navigation, 143(2), 1996, pp. 113-120
Citation: M. Diani, LINKING MOBILIZATION FRAMES AND POLITICAL OPPORTUNITIES - INSIGHTS FROM REGIONAL POPULISM IN ITALY, American sociological review, 61(6), 1996, pp. 1053-1069
Authors:
DIANI M
MESLI A
KUBLER L
CLAVERIE A
BALLADORE JL
AUBEL D
PEYRE S
HEISER T
BISCHOFF JL
Citation: M. Diani et al., OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113
Citation: M. Diani, VOYAGE TO BERLUSCONIA - NATIONAL IDENTITY , SOCIAL-MOVEMENTS AND CIVIL-SOCIETY IN ITALY 1984-94, Information sur les sciences sociales (Paris), 34(4), 1995, pp. 539-565
Authors:
JUILLAGUET S
KUBLER L
DIANI M
BISCHOFF JL
GEWINNER G
WETZEL P
BECOURT N
Citation: S. Juillaguet et al., STRONG ELEMENT DEPENDENCE OF C 1S AND SI 2P X-RAY PHOTOELECTRON DIFFRACTION PROFILES FOR IDENTICAL C AND SI LOCAL GEOMETRIES IN BETA-SIC, Surface science, 339(3), 1995, pp. 363-371
Authors:
AUBEL D
DIANI M
KUBLER L
BISCHOFF JL
BOLMONT D
Citation: D. Aubel et al., SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES, Journal of non-crystalline solids, 187, 1995, pp. 319-323
Authors:
CLAVERIE A
FAURE J
BALLADORE JL
SIMON L
MESLI A
DIANI M
KUBLER L
AUBEL D
Citation: A. Claverie et al., A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 157(1-4), 1995, pp. 420-425
Authors:
DIANI M
KUBLER L
BISCHOFF JL
GROB JJ
PREVOT B
MESLI A
Citation: M. Diani et al., SYNTHESIS OF EPITAXIAL SI1-YCY ALLOYS ON SI(001) WITH HIGH-LEVEL OF NON-USUAL SUBSTITUTIONAL CARBON INCORPORATION, Journal of crystal growth, 157(1-4), 1995, pp. 431-435
Authors:
AUBEL D
DIANI M
STOEHR M
BISCHOFF JL
KUBLER L
BOLMONT D
FRAISSE B
FOURCADE R
MULLER D
Citation: D. Aubel et al., IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY, Journal de physique. III, 4(4), 1994, pp. 733-740
Authors:
AUBEL D
DIANI M
BISCHOFF JL
BOLMONT D
KUBLER L
Citation: D. Aubel et al., STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2699-2704
Authors:
DIANI M
MANSOUR A
KUBLER L
BISCHOFF JL
BOLMONT D
Citation: M. Diani et al., SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION, DIAMOND AND RELATED MATERIALS, 3(3), 1994, pp. 264-269
Authors:
DIANI M
MANSOUR A
KUBLER L
BISCHOFF JL
BOLMONT D
Citation: M. Diani et al., SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION - REPLY, DIAMOND AND RELATED MATERIALS, 3(10), 1994, pp. 1279-1279
Authors:
DIANI M
AUBEL D
BISCHOFF JL
KUBLER L
BOLMONT D
Citation: M. Diani et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION, Thin solid films, 241(1-2), 1994, pp. 305-309
Citation: M. Diani et al., X-RAY PHOTOELECTRON DIFFRACTION OBSERVATION OF BETA-SIC(001) OBTAINEDBY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED GROWTH ON SI(001), Applied surface science, 68(4), 1993, pp. 575-582
Authors:
DIANI M
AUBEL D
BISCHOFF JL
KUBLER L
BOLMONT D
Citation: M. Diani et al., THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION, Surface science, 291(1-2), 1993, pp. 110-116
Citation: M. Diani et al., X-RAY PHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION PROBING OF GE HETEROEPITAXY ON SI (001) 2X1, Journal of applied physics, 73(11), 1993, pp. 7412-7415