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SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION (VOL 14, PG 3400, 1996)/
Authors: FOURRE H DIETTE F CAPPY A
Citation: H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION (VOL 14, PG 3400, 1996)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3603-3603
SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/
Authors: FOURRE H DIETTE F CAPPY A
Citation: H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3400-3402
1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/
Authors: DIETTE F LANGREZ D CODRON JL DELOS E THERON D SALMER G
Citation: F. Diette et al., 1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/, Electronics Letters, 32(9), 1996, pp. 848-850
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