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Results:
1-7
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Results: 7
Authors:
HENKEL A
DELAGE SL
DIFORTEPOISSON MA
BLANCK H
HARTNAGEL HL
Citation: A. Henkel et al., BORON IMPLANTATION INTO GAAS GA0.5IN0.5P HETEROSTRUCTURES/, JPN J A P 1, 36(1A), 1997, pp. 175-180
Authors:
PECZ B
DIFORTEPOISSON MA
TOTH L
RADNOCZI G
HUHN G
PAPAIOANNOU V
STOEMENOS J
Citation: B. Pecz et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 93-96
Authors:
HENKEL A
DELAGE SL
DIFORTEPOISSON MA
CHARTIER E
BLANCK H
HARTNAGEL HL
Citation: A. Henkel et al., COLLECTOR-UP INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH F(MAX)/, Electronics Letters, 33(7), 1997, pp. 634-636
Authors:
HASSINE A
SAPRIEL J
LEBERRE P
DIFORTEPOISSON MA
ALEXANDRE F
QUILLEC M
Citation: A. Hassine et al., SUPERLATTICE EFFECTS INDUCED BY ATOMIC ORDERING ON GAXIN1-XP RAMAN MODES, Physical review. B, Condensed matter, 54(4), 1996, pp. 2728-2732
Authors:
DIFORTEPOISSON MA
BRYLINSKI C
DELAGE SL
BLANCK H
FLORIOT D
CASSETTE S
CHARTIER E
PONS D
HUBER A
Citation: Ma. Difortepoisson et al., GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR VOLTAGE-CONTROLLED OSCILLATORS AND POWER-AMPLIFIER MICROWAVE MONOLITHIC INTEGRATED-CIRCUITS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 242-247
Authors:
DIFORTEPOISSON MA
BRYLINSKI C
DELAGE SL
BLANCK H
FLORIOT D
CASSETTE S
CHARTIER E
PONS D
Citation: Ma. Difortepoisson et al., LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/, Journal of crystal growth, 145(1-4), 1994, pp. 983-985
Authors:
PINKSE PWH
MAUDE DK
PORTAL JC
DIFORTEPOISSON MA
BRYLINSKI C
Citation: Pwh. Pinkse et al., OBSERVATION OF A 2-DIMENSIONAL HOLE GAS IN A GAINP GAAS HETEROJUNCTION/, Solid state communications, 87(2), 1993, pp. 127-129
Risultati:
1-7
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