Authors: BESTAEV MV DIMITROV DT ILIN AY MOSHNIKOV VA TRAGER F STEITZ F

Citation: Mv. Bestaev et al., STUDY OF THE SURFACE-STRUCTURE OF TIN DIOXIDE LAYERS FOR GAS SENSORS BY ATOMIC-FORCE MICROSCOPY, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 587-589

Authors: BOGDANOV KP DIMITROV DT LUTSKAYA OF TAIROV YM

Citation: Kp. Bogdanov et al., EQUILIBRIUM OF NATIVE POINT-DEFECTS IN TIN DIOXIDE, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1033-1035

Authors: BESTAJEV MV DIMITROV DT ILYIN AY KRYUKOV II MOSHNIKOV VA TRAGER F SHTITZ F

Citation: Mv. Bestajev et al., ATOMIC-FORCE MICROSCOPY OF DIOXIDE LAYERS FOR GAS SENSORS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 62(3), 1998, pp. 549-551

Authors: ANDREEV YN YAROSLAVTSEV NP BESTAEV MV DIMITROV DT MOSHNIKOV VA TAIROV YM

Citation: Yn. Andreev et al., STUDY OF SUBMICRON DEPOSITS IN POLYCRYSTALLINE MATERIALS USING THE INTERNAL-FRICTION METHOD, Semiconductors, 31(7), 1997, pp. 714-715

Authors: BAKIN AS BESTAEV MV DIMITROV DT MOSHNIKOV VA TAIROV YM

Citation: As. Bakin et al., SNO2 BASED GAS SENSITIVE SENSOR, Thin solid films, 296(1-2), 1997, pp. 168-171