Authors: WANG Y CHEN LY XU B ZHENG WM ZHANG RJ QIAN DL ZHOU SM ZHENG YX DAI N YANG YM DING KB ZHANG XM

Citation: Y. Wang et al., THE MEDIUM-RELATED OPTICAL-CONSTANTS OF NOBLE-METALS OBSERVED BY ELLIPSOMETRIC STUDY, Thin solid films, 313, 1998, pp. 232-236

Authors: DING KB ZHANG XM ZHAO RR

Citation: Kb. Ding et al., IMPROVED FORMULAS FOR DETERMINING BULK GENERATION LIFETIME AND SURFACE GENERATION VELOCITY, Solid-state electronics, 42(1), 1998, pp. 181-184

Authors: ZHANG XM DING KB YANG AL SHAO DL

Citation: Xm. Zhang et al., PROCESSING AND CHARACTERIZATION OF PECVD SILICON-NITRIDE FILMS, Advanced materials for optics and electronics, 6(3), 1996, pp. 147-150

Authors: DING KB ZHANG XM

Citation: Kb. Ding et Xm. Zhang, A NEW METHOD FOR MIS IL SILICON SOLAR-CELL SIMULATION/, Solid-state electronics, 39(3), 1996, pp. 411-414

Authors: ZHANG XM DING KB

Citation: Xm. Zhang et Kb. Ding, THE DEPENDENCE OF THE INVERSION SHEET RESISTANCE AND INDUCED JUNCTIONDEPTH UPON THE OPERATING-CONDITIONS FOR SILICON INVERSION LAYER SOLAR-CELLS, Journal of physics. D, Applied physics, 29(2), 1996, pp. 483-486

Authors: DING KB ZHANG XM

Citation: Kb. Ding et Xm. Zhang, FIELD-ENHANCED CARRIER-GENERATION EFFECT OF DEEP-LEVEL CENTERS IN SEMICONDUCTORS, Applied physics. A, Solids and surfaces, 57(6), 1993, pp. 529-532