Citation: R. Sharma et al., USE OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS IN THE ANALYSIS OF LOW-TEMPERATURE EPITAXIAL SI FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 82(5), 1997, pp. 2684-2689
Authors:
DORIS B
FRETWELL J
ERSKINE JL
BANERJEE SK
Citation: B. Doris et al., EFFECTS OF IN-SITU DOPING FROM B2H6 AND PH3 ON HYDROGEN DESORPTION AND THE LOW-TEMPERATURE GROWTH MODE OF SI ON SI(100) BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(21), 1997, pp. 2819-2821
Citation: R. Sharma et al., MOLYBDENUM CONTAMINATION IN LOW-TEMPERATURE EPITAXIAL SILICON FILMS GROWN BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(1), 1996, pp. 109-111