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Authors: SHARMA R FRETWELL JL DORIS B BANERJEE S
Citation: R. Sharma et al., USE OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS IN THE ANALYSIS OF LOW-TEMPERATURE EPITAXIAL SI FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 82(5), 1997, pp. 2684-2689

Authors: DORIS B FRETWELL J ERSKINE JL BANERJEE SK
Citation: B. Doris et al., EFFECTS OF IN-SITU DOPING FROM B2H6 AND PH3 ON HYDROGEN DESORPTION AND THE LOW-TEMPERATURE GROWTH MODE OF SI ON SI(100) BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(21), 1997, pp. 2819-2821

Authors: SHARMA R FRETWELL J DORIS B BANERJEE S
Citation: R. Sharma et al., MOLYBDENUM CONTAMINATION IN LOW-TEMPERATURE EPITAXIAL SILICON FILMS GROWN BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(1), 1996, pp. 109-111

Authors: DADAP JI DORIS B DENG Q DOWNER MC LOWELL JK DIEBOLD AC
Citation: Ji. Dadap et al., RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION, Applied physics letters, 64(16), 1994, pp. 2139-2141
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