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Results: 1-8 |
Results: 8
MONOLITHIC INTEGRATION OF A QUANTUM-WELL LASER AND AN OPTICAL AMPLIFIER USING AN ASYMMETRIC TWIN-WAVE-GUIDE STRUCTURE
Authors: STUDENKOV PV GOKHALE MR DRIES JC FORREST SR
Citation: Pv. Studenkov et al., MONOLITHIC INTEGRATION OF A QUANTUM-WELL LASER AND AN OPTICAL AMPLIFIER USING AN ASYMMETRIC TWIN-WAVE-GUIDE STRUCTURE, IEEE photonics technology letters, 10(8), 1998, pp. 1088-1090
STRAIN-COMPENSATED INGA(AS)P-INASP ACTIVE REGIONS FOR 1.3-MU-M WAVELENGTH LASERS
Authors: DRIES JC GOKHALE MR UENOHARA H FORREST SR
Citation: Jc. Dries et al., STRAIN-COMPENSATED INGA(AS)P-INASP ACTIVE REGIONS FOR 1.3-MU-M WAVELENGTH LASERS, IEEE photonics technology letters, 10(1), 1998, pp. 42-44
STRAIN COMPENSATED IN1-XGAXAS(X-LESS-THAN-0.47) QUANTUM-WELL PHOTODIODES FOR EXTENDED WAVELENGTH OPERATION
Authors: DRIES JC GOKHALE MR THOMSON KJ FORREST SR HULL R
Citation: Jc. Dries et al., STRAIN COMPENSATED IN1-XGAXAS(X-LESS-THAN-0.47) QUANTUM-WELL PHOTODIODES FOR EXTENDED WAVELENGTH OPERATION, Applied physics letters, 73(16), 1998, pp. 2263-2265
MONOLITHIC INTEGRATION OF AN INGAASP-INP MQW LASER WAVEGUIDE USING A TWIN-GUIDE STRUCTURE WITH A MODE SELECTION LAYER/
Authors: XU L GOKHALE MR STUDENKOV P DRIES JC CHAO CP GARBUZOV D FORREST SR
Citation: L. Xu et al., MONOLITHIC INTEGRATION OF AN INGAASP-INP MQW LASER WAVEGUIDE USING A TWIN-GUIDE STRUCTURE WITH A MODE SELECTION LAYER/, IEEE photonics technology letters, 9(5), 1997, pp. 569-571
OPTOELECTRONIC INP-INGAAS SMART PIXELS FOR OPTICAL INTERCONNECTIONS AND COMPUTING
Authors: KIM DS DRIES JC GOKHALE MR FORREST SR
Citation: Ds. Kim et al., OPTOELECTRONIC INP-INGAAS SMART PIXELS FOR OPTICAL INTERCONNECTIONS AND COMPUTING, IEEE journal of quantum electronics, 33(8), 1997, pp. 1407-1416
HIGH-POWER HIGH-EFFICIENCY 0.98-MU-M WAVELENGTH INGAAS-(IN)GAAS(P)-INGAP BROADENED WAVE-GUIDE LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: GOKHALE MR DRIES JC STUDENKOV PV FORREST SR GARBUZOV DZ
Citation: Mr. Gokhale et al., HIGH-POWER HIGH-EFFICIENCY 0.98-MU-M WAVELENGTH INGAAS-(IN)GAAS(P)-INGAP BROADENED WAVE-GUIDE LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, IEEE journal of quantum electronics, 33(12), 1997, pp. 2266-2276
13.3W QUASI-CONTINUOUS OPERATION OF 0.99-MU-M WAVELENGTH SCH-QW IN GAAS GAAS/INGAP BROADENED WAVE-GUIDE LASERS/
Authors: GARBUZOV DZ GOKHALE MR DRIES JC STUDENKOV P MARTINELLI RU CONNOLLY JC FORREST SR
Citation: Dz. Garbuzov et al., 13.3W QUASI-CONTINUOUS OPERATION OF 0.99-MU-M WAVELENGTH SCH-QW IN GAAS GAAS/INGAP BROADENED WAVE-GUIDE LASERS/, Electronics Letters, 33(17), 1997, pp. 1462-1464
LOW-THRESHOLD, COMPRESSIVELY-STRAINED INASP INGAASP AND STRAIN-COMPENSATED INASP/INGAP 1.3-MU-M LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM-EPITAXY/
Authors: UENOHARA H GOKHALE MR DRIES JC FORREST SR
Citation: H. Uenohara et al., LOW-THRESHOLD, COMPRESSIVELY-STRAINED INASP INGAASP AND STRAIN-COMPENSATED INASP/INGAP 1.3-MU-M LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM-EPITAXY/, Electronics Letters, 33(14), 1997, pp. 1263-1264
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