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Results: 1-24 |
Results: 24
THICKNESS DEPENDENCE OF THIN OXIDE WEAROUT
Authors: GLADSTONE SM DUMIN DJ
Citation: Sm. Gladstone et Dj. Dumin, THICKNESS DEPENDENCE OF THIN OXIDE WEAROUT, Solid-state electronics, 42(3), 1998, pp. 317-324
THE SEARCH FOR CATHODE AND ANODE TRAPS IN HIGH-VOLTAGE STRESSED SILICON-OXIDES
Authors: CHEN L KANG CS ORALKAN O DUMIN DJ BROWN GA BELLUTTI P
Citation: L. Chen et al., THE SEARCH FOR CATHODE AND ANODE TRAPS IN HIGH-VOLTAGE STRESSED SILICON-OXIDES, Journal of the Electrochemical Society, 145(4), 1998, pp. 1292-1296
DIFFERENTIATION BETWEEN ELECTRIC BREAKDOWNS AND DIELECTRIC-BREAKDOWN IN THIN SILICON-OXIDES
Authors: JACKSON JC ROBINSON T ORALKAN O DUMIN DJ BROWN GA
Citation: Jc. Jackson et al., DIFFERENTIATION BETWEEN ELECTRIC BREAKDOWNS AND DIELECTRIC-BREAKDOWN IN THIN SILICON-OXIDES, Journal of the Electrochemical Society, 145(3), 1998, pp. 1033-1038
CHARACTERIZING WEAROUT, BREAKDOWN AND TRAP GENERATION IN THIN SILICON-OXIDE
Authors: DUMIN DJ
Citation: Dj. Dumin, CHARACTERIZING WEAROUT, BREAKDOWN AND TRAP GENERATION IN THIN SILICON-OXIDE, Microelectronics and reliability, 37(7), 1997, pp. 1029-1038
THICKNESS DEPENDENCE OF STRESS-INDUCED LEAKAGE CURRENTS IN SILICON-OXIDE
Authors: RUNNION EF GLADSTONE SM SCOTT RS DUMIN DJ LIE L MITROS JS
Citation: Ef. Runnion et al., THICKNESS DEPENDENCE OF STRESS-INDUCED LEAKAGE CURRENTS IN SILICON-OXIDE, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 993-1001
NONUNIQUENESS OF TIME-DEPENDENT-DIELECTRIC-BREAKDOWN DISTRIBUTIONS
Authors: JACKSON JC ROBINSON T ORALKAN O DUMIN DJ BROWN GA
Citation: Jc. Jackson et al., NONUNIQUENESS OF TIME-DEPENDENT-DIELECTRIC-BREAKDOWN DISTRIBUTIONS, Applied physics letters, 71(25), 1997, pp. 3682-3684
CORRELATION OF THE DECAY OF TUNNELING CURRENTS WITH TRAP GENERATION INSIDE THIN OXIDES
Authors: DUMIN NA DICKERSON KJ DUMIN DJ MOORE BT
Citation: Na. Dumin et al., CORRELATION OF THE DECAY OF TUNNELING CURRENTS WITH TRAP GENERATION INSIDE THIN OXIDES, Solid-state electronics, 39(5), 1996, pp. 655-660
DETERMINATION OF THE RELATIVE DENSITIES OF HIGH-VOLTAGE STRESSED-GENERATED TRAPS NEAR THE ANODE AND CATHODE IN 10-NM-THICK SILICON-OXIDES
Authors: HUGHES TW DUMIN DJ
Citation: Tw. Hughes et Dj. Dumin, DETERMINATION OF THE RELATIVE DENSITIES OF HIGH-VOLTAGE STRESSED-GENERATED TRAPS NEAR THE ANODE AND CATHODE IN 10-NM-THICK SILICON-OXIDES, Journal of applied physics, 79(6), 1996, pp. 3089-3093
PROPERTIES OF HIGH-VOLTAGE STRESS GENERATED TRAPS IN THIN SILICON-OXIDE
Authors: SCOTT RS DUMIN NA HUGHES TW DUMIN DJ MOORE BT
Citation: Rs. Scott et al., PROPERTIES OF HIGH-VOLTAGE STRESS GENERATED TRAPS IN THIN SILICON-OXIDE, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1133-1143
THE CHARGING AND DISCHARGING OF HIGH-VOLTAGE STRESS-GENERATED TRAPS IN THIN SILICON-OXIDE
Authors: SCOTT RS DUMIN DJ
Citation: Rs. Scott et Dj. Dumin, THE CHARGING AND DISCHARGING OF HIGH-VOLTAGE STRESS-GENERATED TRAPS IN THIN SILICON-OXIDE, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 130-136
THICKNESS DEPENDENCE OF OXIDE WEAROUT
Authors: DUMIN DJ
Citation: Dj. Dumin, THICKNESS DEPENDENCE OF OXIDE WEAROUT, Journal of the Electrochemical Society, 143(11), 1996, pp. 3736-3743
CHARACTERIZING WEAROUT, BREAKDOWN, AND TRAP GENERATION IN THIN SILICON-OXIDE
Authors: DUMIN DJ MADDUX JR SUBRAMONIAM R SCOTT RS VANCHINATHAN S DUMIN NA DICKERSON KJ MOPURI S GLADSTONE SM HUGHES TW
Citation: Dj. Dumin et al., CHARACTERIZING WEAROUT, BREAKDOWN, AND TRAP GENERATION IN THIN SILICON-OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1780-1787
THE SUPERPOSITION OF TRANSIENT LOW-LEVEL LEAKAGE CURRENTS IN STRESSEDSILICON-OXIDES
Authors: SCOTT RS DUMIN DJ
Citation: Rs. Scott et Dj. Dumin, THE SUPERPOSITION OF TRANSIENT LOW-LEVEL LEAKAGE CURRENTS IN STRESSEDSILICON-OXIDES, Solid-state electronics, 38(7), 1995, pp. 1325-1328
EFFECTS OF NITROGEN INCORPORATION DURING GROWTH ON THIN OXIDE WEAROUTAND BREAKDOWN
Authors: DUMIN NA DUMIN DJ HAMES GA WORTMAN JJ BECK SE
Citation: Na. Dumin et al., EFFECTS OF NITROGEN INCORPORATION DURING GROWTH ON THIN OXIDE WEAROUTAND BREAKDOWN, Solid-state electronics, 38(6), 1995, pp. 1161-1164
HIGH-FIELD RELATED THIN OXIDE WEAROUT AND BREAKDOWN
Authors: DUMIN DJ MOPURI SK VANCHINATHAN S SCOTT RS SUBRAMONIAM R LEWIS TG
Citation: Dj. Dumin et al., HIGH-FIELD RELATED THIN OXIDE WEAROUT AND BREAKDOWN, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 760-772
EVIDENCE FOR NONUNIFORM TRAP DISTRIBUTIONS IN THIN OXIDES AFTER HIGH-VOLTAGE STRESSING
Authors: DUMIN DJ VANCHINATHAN S MOPURI S SUBRAMONIAM R
Citation: Dj. Dumin et al., EVIDENCE FOR NONUNIFORM TRAP DISTRIBUTIONS IN THIN OXIDES AFTER HIGH-VOLTAGE STRESSING, Journal of the Electrochemical Society, 142(6), 1995, pp. 2055-2059
WEAROUT AND BREAKDOWN IN THIN SILICON-OXIDE
Authors: DUMIN DJ
Citation: Dj. Dumin, WEAROUT AND BREAKDOWN IN THIN SILICON-OXIDE, Journal of the Electrochemical Society, 142(4), 1995, pp. 1272-1277
VOLTAGE AND FLUENCE DEPENDENCE OF STRESS-GENERATED TRAPS INSIDE THIN SILICON-OXIDE
Authors: SCOTT RS SUBRAMONIUM R DUMIN DJ
Citation: Rs. Scott et al., VOLTAGE AND FLUENCE DEPENDENCE OF STRESS-GENERATED TRAPS INSIDE THIN SILICON-OXIDE, Journal of the Electrochemical Society, 142(3), 1995, pp. 930-934
THE TRANSIENT NATURE OF EXCESS LOW-LEVEL LEAKAGE CURRENTS IN THIN OXIDES
Authors: SCOTT RS DUMIN DJ
Citation: Rs. Scott et Dj. Dumin, THE TRANSIENT NATURE OF EXCESS LOW-LEVEL LEAKAGE CURRENTS IN THIN OXIDES, Journal of the Electrochemical Society, 142(2), 1995, pp. 586-590
TRAPS IN REOXIDIZED NITRIDED OXIDES OF VARYING THICKNESSES
Authors: NATARAJAN R DUMIN DJ
Citation: R. Natarajan et Dj. Dumin, TRAPS IN REOXIDIZED NITRIDED OXIDES OF VARYING THICKNESSES, Journal of the Electrochemical Society, 142(2), 1995, pp. 645-649
LOW-LEVEL LEAKAGE CURRENTS IN THIN SILICON-OXIDE FILMS
Authors: DUMIN DJ COOPER JR MADDUX JR SCOTT RS WONG DP
Citation: Dj. Dumin et al., LOW-LEVEL LEAKAGE CURRENTS IN THIN SILICON-OXIDE FILMS, Journal of applied physics, 76(1), 1994, pp. 319-327
A MODEL RELATING WEAROUT TO BREAKDOWN IN THIN OXIDES
Authors: DUMIN DJ MADDUX JR SCOTT RS SUBRAMONIAM R
Citation: Dj. Dumin et al., A MODEL RELATING WEAROUT TO BREAKDOWN IN THIN OXIDES, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1570-1580
BIPOLAR STRESSING, BREAKDOWN, AND TRAP GENERATION IN THIN SILICON-OXIDES
Authors: DUMIN DJ VANCHINATHAN S
Citation: Dj. Dumin et S. Vanchinathan, BIPOLAR STRESSING, BREAKDOWN, AND TRAP GENERATION IN THIN SILICON-OXIDES, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 936-940
CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES WITH TRAP GENERATION INSIDE THE OXIDES
Authors: DUMIN DJ MADDUX JR
Citation: Dj. Dumin et Jr. Maddux, CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES WITH TRAP GENERATION INSIDE THE OXIDES, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 986-993
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