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Results: 1-7 |
Results: 7
THE INFLUENCE OF PREPARATION CONDITIONS ON THE PHOTOLUMINESCENCE SPECTRA OF LIGHT-EMITTING SI PREPARED BY LASER-PULSE IRRADIATION OF A-SI-H
Authors: ELKADER KMA BORUSIK O CHVOJ Z ULRYCH I OSWALD J PELANT I STUCHLIK J CHAB V KOCKA J DYER TE MARSHALL JM
Citation: Kma. Elkader et al., THE INFLUENCE OF PREPARATION CONDITIONS ON THE PHOTOLUMINESCENCE SPECTRA OF LIGHT-EMITTING SI PREPARED BY LASER-PULSE IRRADIATION OF A-SI-H, Thin solid films, 276(1-2), 1996, pp. 306-309
STRUCTURAL AND ELECTRICAL-TRANSPORT PROPERTIES OF EXCIMER (ARF)-LASER-CRYSTALLIZED SILICON-CARBIDE
Authors: LAU SP MARSHALL JM DYER TE
Citation: Sp. Lau et al., STRUCTURAL AND ELECTRICAL-TRANSPORT PROPERTIES OF EXCIMER (ARF)-LASER-CRYSTALLIZED SILICON-CARBIDE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(3), 1995, pp. 323-333
PICOSECOND DECAY OF PHOTOINDUCED ABSORPTION IN UNDOPED AMORPHOUS AND POLYCRYSTALLINE SILICON THIN-FILMS
Authors: KUBINYI M GROFCSIK A JONES WJ DYER TE MARSHALL JM HEPBURN AR
Citation: M. Kubinyi et al., PICOSECOND DECAY OF PHOTOINDUCED ABSORPTION IN UNDOPED AMORPHOUS AND POLYCRYSTALLINE SILICON THIN-FILMS, Thin solid films, 263(1), 1995, pp. 99-104
OPTOELECTRONIC PROPERTIES OF POLYCRYSTALLINE SILICON PRODUCED BY LOW-TEMPERATURE (600-DEGREES-C) SOLID-PHASE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON
Authors: DYER TE MARSHALL JM DAVIES JF
Citation: Te. Dyer et al., OPTOELECTRONIC PROPERTIES OF POLYCRYSTALLINE SILICON PRODUCED BY LOW-TEMPERATURE (600-DEGREES-C) SOLID-PHASE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(3), 1994, pp. 509-523
OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF POLYSILICON PRODUCED BY EXCIMER-LASER AND FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)
Authors: DYER TE MARSHALL JM PICKIN W HEPBURN AR DAVIES JF
Citation: Te. Dyer et al., OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF POLYSILICON PRODUCED BY EXCIMER-LASER AND FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H), IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 15-18
A-SIC-H THIN-FILM VISIBLE LIGHT-EMITTING-DIODES WITH HIGHLY CONDUCTIVE WIDE-BAND GAP A-SIC-H AS THE CARRIER INJECTION LAYERS
Authors: LAU SP MARSHALL JM DYER TE HEPBURN AR DAVIES JF
Citation: Sp. Lau et al., A-SIC-H THIN-FILM VISIBLE LIGHT-EMITTING-DIODES WITH HIGHLY CONDUCTIVE WIDE-BAND GAP A-SIC-H AS THE CARRIER INJECTION LAYERS, Journal of non-crystalline solids, 166, 1993, pp. 813-816
POLYSILICON PRODUCED BY EXCIMER (ARF) LASER CRYSTALLIZATION AND LOW-TEMPERATURE (600-DEGREES-C) FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)
Authors: DYER TE MARSHALL JM PICKIN W HEPBURN AR DAVIES JF
Citation: Te. Dyer et al., POLYSILICON PRODUCED BY EXCIMER (ARF) LASER CRYSTALLIZATION AND LOW-TEMPERATURE (600-DEGREES-C) FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H), Journal of non-crystalline solids, 166, 1993, pp. 1001-1004
Risultati: 1-7 |