ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

Hot-electron transport processes in ballistic-electron emission microscopyat Au-Si interfaces

Authors: Dahne-Prietsch, M Kalka, T

Citation: M. Dahne-prietsch et T. Kalka, Hot-electron transport processes in ballistic-electron emission microscopyat Au-Si interfaces, J ELEC SPEC, 109(1-2), 2000, pp. 211-222

Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots

Authors: Spithoven, JL Lorbacher, J Manke, I Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M

Citation: Jl. Spithoven et al., Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots, J VAC SCI B, 17(4), 1999, pp. 1632-1638

Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

Authors: Flebbe, O Eisele, H Kalka, T Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M

Citation: O. Flebbe et al., Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition, J VAC SCI B, 17(4), 1999, pp. 1639-1648

Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111)

Authors: Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M

Citation: S. Vandre et al., Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111), J VAC SCI B, 17(4), 1999, pp. 1682-1690

The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy

Authors: Eisele, H Flebbe, O Kalka, T Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M

Citation: H. Eisele et al., The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy, PHYS ST S-B, 215(1), 1999, pp. 865-868

SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fibre tips

Authors: Manke, I Lorbacher, J Spithoven, JL Heinrichsdorff, F Dahne-Prietsch, M

Citation: I. Manke et al., SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fibre tips, SURF INT AN, 27(5-6), 1999, pp. 491-494

Cross-sectional STM study of InAs quantum dots for laser devices

Authors: Eisele, H Flebbe, O Kalka, T Dahne-Prietsch, M

Citation: H. Eisele et al., Cross-sectional STM study of InAs quantum dots for laser devices, SURF INT AN, 27(5-6), 1999, pp. 537-541

Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111)

Authors: Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M

Citation: S. Vandre et al., Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111), PHYS REV L, 82(9), 1999, pp. 1927-1930

Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111) (vol 82, pg 1927, 1999)

Authors: Vandre, S Kalka, T Preinesberger, C Dahne-Prietsch, M

Citation: S. Vandre et al., Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111) (vol 82, pg 1927, 1999), PHYS REV L, 82(21), 1999, pp. 4370-4370

Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

Authors: Eisele, H Flebbe, O Kalka, T Preinesberger, C Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M

Citation: H. Eisele et al., Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, APPL PHYS L, 75(1), 1999, pp. 106-108

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