Citation: P. De Wolf et al., Electrical characterization of semiconductor materials and devices using scanning probe microscopy, MAT SC S PR, 4(1-3), 2001, pp. 71-76
Citation: R. Valtonen et al., Channel length extraction for DMOS transistors using capacitance-voltage measurements, IEEE DEVICE, 48(7), 2001, pp. 1454-1459
Authors:
De Wolf, P
Stephenson, R
Trenkler, T
Clarysse, T
Hantschel, T
Vandevorst, W
Citation: P. De Wolf et al., Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy, J VAC SCI B, 18(1), 2000, pp. 361-368
Authors:
Stephenson, R
Verhulst, A
De Wolf, P
Caymax, M
Vandervorst, W
Citation: R. Stephenson et al., Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples, J VAC SCI B, 18(1), 2000, pp. 405-408
Authors:
Trenkler, T
Hantschel, T
Stephenson, R
De Wolf, P
Vandervorst, W
Hellemans, L
Malave, A
Buchel, D
Oesterschulze, E
Kulisch, W
Niedermann, P
Sulzbach, T
Ohlsson, O
Citation: T. Trenkler et al., Evaluating probes for "electrical" atomic force microscopy, J VAC SCI B, 18(1), 2000, pp. 418-427
Authors:
De Wolf, P
Vandervorst, W
Smith, H
Khalil, N
Citation: P. De Wolf et al., Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling, J VAC SCI B, 18(1), 2000, pp. 540-544
Authors:
Stephenson, R
De Wolf, P
Trenkler, T
Hantschel, T
Clarysse, T
Jansen, P
Vandervorst, W
Citation: R. Stephenson et al., Practicalities and limitations of scanning capacitance microscopy for routine integrated circuit characterization, J VAC SCI B, 18(1), 2000, pp. 555-559
Authors:
De Wolf, P
Geva, M
Reynolds, CL
Hantschel, T
Vandervorst, W
Bylsma, RB
Citation: P. De Wolf et al., Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy., J VAC SCI A, 17(4), 1999, pp. 1285-1288