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Results:
1-23
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Results: 23
Authors:
Krafcsik, OH
Vida, G
Pocsik, I
Josepovits, KV
Deak, P
Citation: Oh. Krafcsik et al., Carbon diffusion through SiO2 from a hydrogenated amorphous carbon layer and accumulation at the SiO2/Si interface, JPN J A P 1, 40(4A), 2001, pp. 2197-2200
Authors:
Deak, P
Aradi, B
Gali, A
Citation: P. Deak et al., Boron and aluminium doping in SiC and its passivation by hydrogen, J PHYS-COND, 13(40), 2001, pp. 9019-9026
Authors:
Kohler, C
Hajnal, Z
Deak, P
Frauenheim, T
Suhai, S
Citation: C. Kohler et al., Theoretical investigation of carbon defects and diffusion in alpha-quartz - art. no. 085333, PHYS REV B, 6408(8), 2001, pp. 5333
Authors:
Aradi, B
Gali, A
Deak, P
Lowther, JE
Son, NT
Janzen, E
Choyke, WJ
Citation: B. Aradi et al., Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202, PHYS REV B, 6324(24), 2001, pp. 5202
Authors:
Kiss, G
Krafcsik, OH
Kovacs, K
Josepovits, VK
Fleischer, M
Meixner, H
Deak, P
Reti, F
Citation: G. Kiss et al., Impedance spectroscopic and secondary ion mass spectrometric studies of beta-Ga2O3/O-2 interaction, THIN SOL FI, 391(2), 2001, pp. 239-242
Authors:
Donaldson, MM
Tavares, AAM
Ohkura, H
Deak, P
Glover, DM
Citation: Mm. Donaldson et al., Metaphase arrest with centromere separation in polo mutants of Drosophila, J CELL BIOL, 153(4), 2001, pp. 663-675
Authors:
Aradi, B
Deak, P
Son, NT
Janzen, E
Choyke, WJ
Devaty, RP
Citation: B. Aradi et al., Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide, APPL PHYS L, 79(17), 2001, pp. 2746-2748
Authors:
Aradi, B
Lowther, JE
Deak, P
Leitch, A
Citation: B. Aradi et al., Super-cell calculation of the nitrogen defect in diamond and cubic siliconcarbide, DIAM RELAT, 9(8), 2000, pp. 1471-1474
Authors:
Katai, S
Kovats, A
Maros, I
Deak, P
Citation: S. Katai et al., Ion energy distributions and their evolution during bias-enhanced nucleation of chemical vapor deposition of diamond, DIAM RELAT, 9(3-6), 2000, pp. 317-321
Authors:
Deak, P
Frauenheim, T
Pederson, MR
Citation: P. Deak et al., Computer simulation of materials at atomic level - Preface, PHYS ST S-B, 217(1), 2000, pp. 5-7
Authors:
Deak, P
Citation: P. Deak, Choosing models for solids, PHYS ST S-B, 217(1), 2000, pp. 9-21
Authors:
Gali, A
Deak, P
Briddon, PR
Devaty, RP
Choyke, WJ
Citation: A. Gali et al., Phosphorus-related deep donor in SiC, PHYS REV B, 61(19), 2000, pp. 12602-12604
Authors:
Katai, S
Tass, Z
Bori, L
Hars, G
Deak, P
Citation: S. Katai et al., Plasma analyser for plasma-assisted surface process diagnostics up to 100 mbar, VACUUM, 56(1), 2000, pp. 39-43
Authors:
Gali, A
Aradi, B
Deak, P
Choyke, WJ
Son, NT
Citation: A. Gali et al., Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC, PHYS REV L, 84(21), 2000, pp. 4926-4929
Authors:
Inoue, YH
Avides, MD
Shiraki, M
Deak, P
Yamaguchi, M
Nishimoto, Y
Matsukage, A
Glover, DM
Citation: Yh. Inoue et al., Orbit, a novel microtubule-associated protein essential for mitosis in Drosophila melanogaster, J CELL BIOL, 149(1), 2000, pp. 153-165
Authors:
Mathe, E
Bates, H
Huikeshoven, H
Deak, P
Glover, DM
Cotterill, S
Citation: E. Mathe et al., Importin-alpha 3 is required at multiple stages of Drosophila development and has a role in the completion of oogenesis, DEVELOP BIO, 223(2), 2000, pp. 307-322
Authors:
Gali, A
Deak, P
Devaty, RP
Choyke, WJ
Citation: A. Gali et al., Boron-vacancy complex in SiC, PHYS REV B, 60(15), 1999, pp. 10620-10623
Authors:
Katai, S
Tass, Z
Bori, L
Hars, G
Deak, P
Geelhaar, L
Citation: S. Katai et al., Ion beam mass spectrometer for compositional analysis of plasma assisted surface processes in the pressure range of 1-50 mbar, REV SCI INS, 70(8), 1999, pp. 3324-3328
Authors:
Hajnal, Z
Gali, A
Miro, J
Deak, P
Citation: Z. Hajnal et al., Theoretical investigation of the oxygen vacancies in beta-Ga2O3, PHYS ST S-A, 171(2), 1999, pp. R5-R6
Authors:
Cullen, CF
Deak, P
Glover, DM
Ohkura, H
Citation: Cf. Cullen et al., mini spindles: A gene encoding a conserved microtubule-associated protein required for the integrity of the mitotic spindle in Drosophila, J CELL BIOL, 146(5), 1999, pp. 1005-1018
Authors:
Hajnal, Z
Miro, J
Kiss, G
Reti, F
Deak, P
Herndon, RC
Kuperberg, JM
Citation: Z. Hajnal et al., Role of oxygen vacancy defect states in the n-type conduction of beta-Ga2O3, J APPL PHYS, 86(7), 1999, pp. 3792-3796
Authors:
Katai, S
Tass, Z
Hars, G
Deak, P
Citation: S. Katai et al., Measurement of ion energy distributions in the bias enhanced nucleation ofchemical vapor deposited diamond, J APPL PHYS, 86(10), 1999, pp. 5549-5555
Authors:
Deak, P
Miro, J
Gali, A
Udvardi, L
Overhof, H
Citation: P. Deak et al., The spin state of the neutral silicon vacancy in 3C-SiC, APPL PHYS L, 75(14), 1999, pp. 2103-2105
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