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Results: 1-10 |
Results: 10

Authors: Debernardi, A Ulrich, C Cardona, M Syassen, K
Citation: A. Debernardi et al., Pressure dependence of Raman linewidth in semiconductors, PHYS ST S-B, 223(1), 2001, pp. 213-223

Authors: Debernardi, A Alouani, M Dreysse, H
Citation: A. Debernardi et al., Ab initio thermodynamics of metals: Al and W - art. no. 064305, PHYS REV B, 6305(6), 2001, pp. 4305

Authors: Galanakis, I Debernardi, A Alouani, M Dreysse, H
Citation: I. Galanakis et al., Surface magnetism of 3d monolayers on a W(110) substrate probed by X-ray magnetic circular dichroism, SURF SCI, 482, 2001, pp. 1030-1034

Authors: Widulle, F Kramp, S Pyka, NM Gobel, A Ruf, T Debernardi, A Lauck, R Cardona, M
Citation: F. Widulle et al., The phonon dispersion of wurtzite CdSe, PHYSICA B, 263, 1999, pp. 448-451

Authors: Debernardi, A Cardona, M
Citation: A. Debernardi et M. Cardona, First principles calculation of the real part of phonon self energy in compound semiconductors, PHYSICA B, 263, 1999, pp. 687-690

Authors: Ulrich, C Debernardi, A Anastassakis, E Syassen, K Cardona, M
Citation: C. Ulrich et al., Raman linewidths of phonons in Si, Ge, and SiC under pressure, PHYS ST S-B, 211(1), 1999, pp. 293-300

Authors: Debernardi, A Ulrich, C Syassen, K Cardona, M
Citation: A. Debernardi et al., Raman linewidths of optical phonons in 3C-SiC under pressure: First-principles calculations and experimental results, PHYS REV B, 59(10), 1999, pp. 6774-6783

Authors: Debernardi, A
Citation: A. Debernardi, Anharmonic effects in the phonons of III-V semiconductors: first principles calculations, SOL ST COMM, 113(1), 1999, pp. 1-10

Authors: Widulle, F Ruf, T Buresch, O Debernardi, A Cardona, M
Citation: F. Widulle et al., Raman study of isotope effects and phonon eigenvectors in SiC, PHYS REV L, 82(15), 1999, pp. 3089-3092

Authors: Debernardi, A Gualini, E
Citation: A. Debernardi et E. Gualini, The geography of logistics services in the Milan metropolitan area: structural change and actual planning challenges, GEOGR Z, 87(3-4), 1999, pp. 238-252
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