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Results: 1-7 |
Results: 7

Authors: Cassette, S Delage, SL Chartier, E Floriot, D Poisson, MA Garcia, JC Grattepain, C Arroyo, JM Plana, R Bland, SW
Citation: S. Cassette et al., Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability, MAT SCI E B, 80(1-3), 2001, pp. 279-283

Authors: Perez, S Gonzalez, T Delage, SL Obregon, J
Citation: S. Perez et al., Monte Carlo analysis of the influence of dc conditions on the upconversionof generation-recombination noise in semiconductors, SEMIC SCI T, 16(2), 2001, pp. L8-L11

Authors: Sydlo, C Mottet, B Ganis, H Hartnagel, HL Krozer, V Delage, SL Cassette, S Chartier, E Floriot, D
Citation: C. Sydlo et al., Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaPHBT, MICROEL REL, 41(9-10), 2001, pp. 1567-1571

Authors: Delage, SL
Citation: Sl. Delage, Heterojunction bipolar transistors for millimeter waves applications: Trends and achievements, ANN TELECOM, 56(1-2), 2001, pp. 5-14

Authors: Perez, S Gonzalez, T Delage, SL Obregon, J
Citation: S. Perez et al., Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields, J APPL PHYS, 88(2), 2000, pp. 800-807

Authors: Borgarino, M Plana, R Delage, SL Fantini, F Graffeuil, J
Citation: M. Borgarino et al., Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's, IEEE DEVICE, 46(1), 1999, pp. 10-16

Authors: Girardot, A Henkel, A Delage, SL Diforte-Poisson, MA Chartier, E Floriot, D Cassette, S Rolland, PA
Citation: A. Girardot et al., High-performance collector-up InGaP/GaAs heterojunction bipolar transistorwith Schottky contact, ELECTR LETT, 35(8), 1999, pp. 670-672
Risultati: 1-7 |