Authors:
Cassette, S
Delage, SL
Chartier, E
Floriot, D
Poisson, MA
Garcia, JC
Grattepain, C
Arroyo, JM
Plana, R
Bland, SW
Citation: S. Cassette et al., Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability, MAT SCI E B, 80(1-3), 2001, pp. 279-283
Authors:
Perez, S
Gonzalez, T
Delage, SL
Obregon, J
Citation: S. Perez et al., Monte Carlo analysis of the influence of dc conditions on the upconversionof generation-recombination noise in semiconductors, SEMIC SCI T, 16(2), 2001, pp. L8-L11
Authors:
Sydlo, C
Mottet, B
Ganis, H
Hartnagel, HL
Krozer, V
Delage, SL
Cassette, S
Chartier, E
Floriot, D
Citation: C. Sydlo et al., Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaPHBT, MICROEL REL, 41(9-10), 2001, pp. 1567-1571
Citation: Sl. Delage, Heterojunction bipolar transistors for millimeter waves applications: Trends and achievements, ANN TELECOM, 56(1-2), 2001, pp. 5-14
Authors:
Perez, S
Gonzalez, T
Delage, SL
Obregon, J
Citation: S. Perez et al., Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields, J APPL PHYS, 88(2), 2000, pp. 800-807
Authors:
Borgarino, M
Plana, R
Delage, SL
Fantini, F
Graffeuil, J
Citation: M. Borgarino et al., Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's, IEEE DEVICE, 46(1), 1999, pp. 10-16
Authors:
Girardot, A
Henkel, A
Delage, SL
Diforte-Poisson, MA
Chartier, E
Floriot, D
Cassette, S
Rolland, PA
Citation: A. Girardot et al., High-performance collector-up InGaP/GaAs heterojunction bipolar transistorwith Schottky contact, ELECTR LETT, 35(8), 1999, pp. 670-672