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Results: 1-18 |
Results: 18
Tunable Fabry-Perot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer
Authors: Winchester, KJ Dell, JM
Citation: Kj. Winchester et Jm. Dell, Tunable Fabry-Perot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer, J MICROM M, 11(5), 2001, pp. 589-594
Diffusion length measurements in p-HgCdTe using laser beam induced current
Authors: Redfern, DA Thomas, JA Musca, CA Dell, JM Faraone, L
Citation: Da. Redfern et al., Diffusion length measurements in p-HgCdTe using laser beam induced current, J ELEC MAT, 30(6), 2001, pp. 696-703
p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas
Authors: White, J Pal, R Dell, JM Musca, CA Antoszewski, J Faraone, L Burke, P
Citation: J. White et al., p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas, J ELEC MAT, 30(6), 2001, pp. 762-767
A simplified fabrication process for HgCdTe photoconductive detectors using CH4/H-2 reactive-ion-etching-induced blocking contacts
Authors: Smith, EPG Winchester, KJ Musca, CA Dell, JM Faraone, L
Citation: Epg. Smith et al., A simplified fabrication process for HgCdTe photoconductive detectors using CH4/H-2 reactive-ion-etching-induced blocking contacts, SEMIC SCI T, 16(6), 2001, pp. 455-462
Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion
Authors: Antoszewski, J Musca, CA Dell, JM Faraone, L
Citation: J. Antoszewski et al., Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion, J ELEC MAT, 29(6), 2000, pp. 837-840
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
Authors: Dell, JM Antoszewski, J Rais, MH Musca, C White, JK Nener, BD Faraone, L
Citation: Jm. Dell et al., HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology, J ELEC MAT, 29(6), 2000, pp. 841-848
H-2-based dry plasma etching for mesa structuring of HgCdTe
Authors: Smith, EPG Musca, CA Redfern, DA Dell, JM Faraone, L
Citation: Epg. Smith et al., H-2-based dry plasma etching for mesa structuring of HgCdTe, J ELEC MAT, 29(6), 2000, pp. 853-858
Transferable silicon nitride microcavities
Authors: Winchester, K Spaargaren, SMR Dell, JM
Citation: K. Winchester et al., Transferable silicon nitride microcavities, MICROELEC J, 31(7), 2000, pp. 523-529
Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures
Authors: Umana-Membreno, GA Dell, JM Faraone, L Wu, YF Parish, G Mishra, UK
Citation: Ga. Umana-membreno et al., Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures, MICROELEC J, 31(7), 2000, pp. 531-536
Laser beam induced current as a tool for HgCdTe photodiode characterisation
Authors: Musca, CA Redfern, DA Dell, JM Faraone, L
Citation: Ca. Musca et al., Laser beam induced current as a tool for HgCdTe photodiode characterisation, MICROELEC J, 31(7), 2000, pp. 537-544
HgCdTe photovoltaic detectors fabricated using a new junction formation technology
Authors: Rais, MH Musca, CA Dell, JM Antoszewski, J Nener, BD Faraone, L
Citation: Mh. Rais et al., HgCdTe photovoltaic detectors fabricated using a new junction formation technology, MICROELEC J, 31(7), 2000, pp. 545-551
Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion
Authors: Rais, MH Musca, CA Antoszewski, J Dell, JM Nener, BD Faraone, L
Citation: Mh. Rais et al., Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion, J CRYST GR, 214, 2000, pp. 1106-1110
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
Authors: Antoszewski, J Gracey, M Dell, JM Faraone, L Fisher, TA Parish, G Wu, YF Mishra, UK
Citation: J. Antoszewski et al., Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors, J APPL PHYS, 87(8), 2000, pp. 3900-3904
Reactive ion etching for mesa structuring in HgCdTe
Authors: Smith, EPG Musca, CA Redfern, DA Dell, JM Faraone, L
Citation: Epg. Smith et al., Reactive ion etching for mesa structuring in HgCdTe, J VAC SCI A, 17(5), 1999, pp. 2503-2509
Junction depth measurement in HgCdTe using laser beam induced current (LBIC)
Authors: Musca, CA Redfern, DA Smith, EPG Dell, JM Faraone, L Bajaj, J
Citation: Ca. Musca et al., Junction depth measurement in HgCdTe using laser beam induced current (LBIC), J ELEC MAT, 28(6), 1999, pp. 603-610
Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays
Authors: Musca, CA Dell, JM Faraone, L Bajaj, J Pepper, T Spariosu, K Blackwell, J Bruce, C
Citation: Ca. Musca et al., Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays, J ELEC MAT, 28(6), 1999, pp. 617-623
Near band-edge field-dependent absorption coefficient and refractive indexdetermined by photocurrent and transmittance measurements
Authors: Xu, MG Dell, JM Siliquini, JF Chavarkar, P
Citation: Mg. Xu et al., Near band-edge field-dependent absorption coefficient and refractive indexdetermined by photocurrent and transmittance measurements, APPL OPTICS, 38(24), 1999, pp. 5127-5132
Design of externally tuned asymmetric fibre Fabry-Perot electroabsorption optical modulators
Authors: Xu, MG Nener, BD Dell, JM
Citation: Mg. Xu et al., Design of externally tuned asymmetric fibre Fabry-Perot electroabsorption optical modulators, IEE P-OPTO, 145(6), 1998, pp. 344-352
Risultati: 1-18 |