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Results:
1-12
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Results: 12
Authors:
Mouillet, R
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: R. Mouillet et al., Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistorgrown on low-temperature AlN interlayer, JPN J A P 2, 40(5B), 2001, pp. L498-L501
Authors:
Detchprohm, T
Yano, M
Sano, S
Nakamura, R
Mochiduki, S
Nakamura, T
Amano, H
Akasaki, I
Citation: T. Detchprohm et al., Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: A new approach for growing low-dislocation-density GaN single crystals, JPN J A P 2, 40(1AB), 2001, pp. L16-L19
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes, JPN J A P 2, 39(5A), 2000, pp. L387-L389
Authors:
Iwaya, M
Terao, S
Hayashi, N
Kashima, T
Detchprohm, T
Amano, H
Akasaki, I
Hirano, A
Pernot, C
Citation: M. Iwaya et al., High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector, MRS I J N S, 5, 2000, pp. NIL_40-NIL_45
Authors:
Akasaki, I
Kamiyama, S
Detchprohm, T
Takeuchi, T
Amano, H
Citation: I. Akasaki et al., Growth of crack-free thick AlGaN layer and its application to GaN-based laser diode, MRS I J N S, 5, 2000, pp. NIL_388-NIL_393
Authors:
Wetzel, C
Detchprohm, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices, J ELEC MAT, 29(3), 2000, pp. 252-255
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Yamaguchi, S
Wetzel, C
Amano, H
Akasaki, I
Kaneko, YW
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, YS
Yamada, N
Citation: T. Takeuchi et al., Nitride-based laser diodes using thick n-AlGaN layers, J ELEC MAT, 29(3), 2000, pp. 302-305
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Low-intensity ultraviolet photodetectors based on AlGaN, JPN J A P 2, 38(5A), 1999, pp. L487-L489
Authors:
Wetzel, C
Kasumi, M
Detchprohm, T
Takeuchi, T
Amano, H
Akasaki, I
Citation: C. Wetzel et al., Discrete stark-like ladder in piezoelectric GaInN/GaN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 399-403
Authors:
Takeuchi, T
Detchprohm, T
Yano, M
Yamaguchi, M
Hayashi, N
Iwaya, M
Isomura, K
Kimura, K
Amano, H
Akasaki, I
Kaneko, Y
Watanabe, S
Yamaoka, Y
Shioda, R
Hidaka, T
Kaneko, Y
Yamada, N
Citation: T. Takeuchi et al., Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer, PHYS ST S-A, 176(1), 1999, pp. 31-34
Authors:
Pernot, C
Hirano, A
Iwaya, M
Detchprohm, T
Amano, H
Akasaki, I
Citation: C. Pernot et al., Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density, PHYS ST S-A, 176(1), 1999, pp. 147-151
Authors:
Takeuchi, T
Detchprohm, T
Iwaya, M
Hayashi, N
Isomura, K
Kimura, K
Yamaguchi, M
Amano, H
Akasaki, I
Kaneko, Y
Shioda, R
Watanabe, S
Hidaka, T
Yamaoka, Y
Kaneko, Y
Yamada, N
Citation: T. Takeuchi et al., Improvement of far-field pattern in nitride laser diodes, APPL PHYS L, 75(19), 1999, pp. 2960-2962
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