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Results:
1-22
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Results: 22
Authors:
Pantelides, ST
Di Ventra, M
Lang, ND
Citation: St. Pantelides et al., Molecular electronics by the numbers, PHYSICA B, 296(1-3), 2001, pp. 72-77
Authors:
Wang, SW
Di Ventra, M
Kim, SG
Pantelides, ST
Citation: Sw. Wang et al., Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO2, PHYS REV L, 86(26), 2001, pp. 5946-5949
Authors:
Di Ventra, M
Kim, SG
Pantelides, ST
Lang, ND
Citation: M. Di Ventra et al., Temperature effects on the transport properties of molecules, PHYS REV L, 86(2), 2001, pp. 288-291
Authors:
Di Ventra, M
Citation: M. Di Ventra, Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?, APPL PHYS L, 79(15), 2001, pp. 2402-2404
Authors:
Rochefort, A
Di Ventra, M
Avouris, P
Citation: A. Rochefort et al., Switching behavior of semiconducting carbon nanotubes under an external electric field, APPL PHYS L, 78(17), 2001, pp. 2521-2523
Authors:
Rashkeev, SN
Di Ventra, M
Pantelides, ST
Citation: Sn. Rashkeev et al., Hydrogen passivation and activation of oxygen complexes in silicon, APPL PHYS L, 78(11), 2001, pp. 1571-1573
Authors:
Di Ventra, M
Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation, J ELEC MAT, 29(3), 2000, pp. 353-358
Authors:
Di Ventra, M
Berthod, C
Binggeli, N
Citation: M. Di Ventra et al., Koster-Slater model for the interface-state problem, PHYS REV B, 62(16), 2000, pp. R10622-R10625
Authors:
Di Ventra, M
Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Hellmann-Feynman theorem and the definition of forces in quantum time-dependent and transport problems, PHYS REV B, 61(23), 2000, pp. 16207-16212
Authors:
Di Ventra, M
Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Atomic-scale mechanisms of oxygen precipitation and thin-film oxidation ofSiC (vol 83, pg 1624, 1999), PHYS REV L, 85(8), 2000, pp. 1782-1782
Authors:
Di Ventra, M
Pantelides, ST
Lang, ND
Citation: M. Di Ventra et al., First-principles calculation of transport properties of a molecular device, PHYS REV L, 84(5), 2000, pp. 979-982
Authors:
Bunson, PE
Di Ventra, M
Pantelides, ST
Fleetwood, DM
Schrimpf, RD
Citation: Pe. Bunson et al., Hydrogen-related defects in irradiated SiO2, IEEE NUCL S, 47(6), 2000, pp. 2289-2296
Authors:
Chung, G
Tin, CC
Williams, JR
McDonald, K
Di Ventra, M
Chanana, RK
Pantelides, ST
Feldman, LC
Weller, RA
Citation: G. Chung et al., Effects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metal-oxide-semiconductor capacitors, APPL PHYS L, 77(22), 2000, pp. 3601-3603
Authors:
Chanana, RK
McDonald, K
Di Ventra, M
Pantelides, ST
Feldman, LC
Chung, GY
Tin, CC
Williams, JR
Weller, RA
Citation: Rk. Chanana et al., Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures, APPL PHYS L, 77(16), 2000, pp. 2560-2562
Authors:
Di Ventra, M
Pantelides, ST
Lang, ND
Citation: M. Di Ventra et al., The benzene molecule as a molecular resonant-tunneling transistor, APPL PHYS L, 76(23), 2000, pp. 3448-3450
Authors:
Chung, GY
Tin, CC
Williams, JR
McDonald, K
Di Ventra, M
Pantelides, ST
Feldman, LC
Weller, RA
Citation: Gy. Chung et al., Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide, APPL PHYS L, 76(13), 2000, pp. 1713-1715
Authors:
Di Ventra, M
Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Scanning-tunneling-microscopy images: A fully ab initio approach, PHYS REV B, 59(8), 1999, pp. R5320-R5323
Authors:
Di Ventra, M
Pantelides, ST
Citation: M. Di Ventra et St. Pantelides, Atomic-scale mechanisms of oxygen precipitation and thin-film oxidation ofSiC, PHYS REV L, 83(8), 1999, pp. 1624-1627
Authors:
Bunson, PE
Di Ventra, M
Pantelides, ST
Schrimpf, RD
Galloway, KF
Citation: Pe. Bunson et al., Ab initio calculations of H+ energetics in SiO2: Implications for transport, IEEE NUCL S, 46(6), 1999, pp. 1568-1573
Authors:
Delaney, P
Di Ventra, M
Citation: P. Delaney et M. Di Ventra, Comment on "Contact resistance of carbon nanotubes" [Appl. Phys. Lett. 74,2122 (1999)], APPL PHYS L, 75(25), 1999, pp. 4028-4029
Authors:
Delaney, P
Di Ventra, M
Pantelides, ST
Citation: P. Delaney et al., Quantized conductance of multiwalled carbon nanotubes, APPL PHYS L, 75(24), 1999, pp. 3787-3789
Authors:
Di Ventra, M
Citation: M. Di Ventra, Stability of ultrathin semiconductor layers, APPL PHYS L, 74(12), 1999, pp. 1722-1724
Risultati:
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