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Citation: Kd. Hobart et al., "p-on-n" Si interband tunnel diode grown by molecular beam epitaxy, J VAC SCI B, 19(1), 2001, pp. 290-293

Authors: Rommel, SL Dillon, TE Berger, PR Thompson, PE Hobart, KD Lake, R Seabaugh, AC

Citation: Sl. Rommel et al., Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities, IEEE ELEC D, 20(7), 1999, pp. 329-331

Authors: Thompson, PE Hobart, KD Twigg, ME Jernigan, GG Dillon, TE Rommel, SL Berger, PR Simons, DS Chi, PH Lake, R Seabaugh, AC

Citation: Pe. Thompson et al., Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy, APPL PHYS L, 75(9), 1999, pp. 1308-1310