Authors:
Sadowski, J
Mathieu, R
Svedlindh, P
Karlsteen, M
Kanski, J
Ilver, L
Asklund, H
Swiatek, K
Domagala, JZ
Bak-Misiuk, J
Maude, D
Citation: J. Sadowski et al., Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures, PHYSICA E, 10(1-3), 2001, pp. 181-185
Authors:
Liliental-Weber, Z
Benamara, M
Washburn, J
Domagala, JZ
Bak-Misiuk, J
Piner, EL
Roberts, JC
Bedair, SM
Citation: Z. Liliental-weber et al., Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies, J ELEC MAT, 30(4), 2001, pp. 439-444
Authors:
Sadowski, J
Mathieu, R
Svedlindh, P
Domagala, JZ
Bak-Misiuk, J
Swiatek, K
Karlsteen, M
Kanski, J
Ilver, L
Asklund, H
Sodervall, U
Citation: J. Sadowski et al., Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates, APPL PHYS L, 78(21), 2001, pp. 3271-3273
Authors:
Kirchner, V
Heinke, H
Einfeldt, S
Hommel, D
Domagala, JZ
Leszczynski, M
Citation: V. Kirchner et al., Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers, MRS I J N S, 5, 2000, pp. NIL_335-NIL_340
Authors:
Sadowski, J
Domagala, JZ
Bak-Misiuk, J
Kolesnik, S
Sawicki, M
Swiatek, K
Kanski, J
Ilver, L
Strom, V
Citation: J. Sadowski et al., Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers, J VAC SCI B, 18(3), 2000, pp. 1697-1700