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Results: 1-8 |
Results: 8
Extraordinarily wide optical gain spectrum in 2.2-2.5 mu m In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers
Authors: Donetsky, DV Westerfeld, D Belenky, GL Martinelli, RU Garbuzov, DZ Connolly, JC
Citation: Dv. Donetsky et al., Extraordinarily wide optical gain spectrum in 2.2-2.5 mu m In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers, J APPL PHYS, 90(8), 2001, pp. 4281-4283
Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-mu m InGaAsP-InP multiple-quantum-well lasers
Authors: Belenky, G Reynolds, CL Shterengas, L Hybertsen, MS Donetsky, DV Shtengel, GE Luryi, S
Citation: G. Belenky et al., Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-mu m InGaAsP-InP multiple-quantum-well lasers, IEEE PHOTON, 12(8), 2000, pp. 969-971
Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW
Authors: Vorobjev, LE Danilov, SN Donetsky, DV Firsov, DA Towe, E Zhukavin, RK Pavlov, SG Shastin, VN
Citation: Le. Vorobjev et al., Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW, PHYSICA B, 272(1-4), 1999, pp. 223-225
Emission and absorption of IR radiation in Ge/GeSi quantum wells in lateral electric fields
Authors: Vorobiev, LE Donetsky, DV Zibik, EA Firsov, DA Aleshkin, VY Kuznetsov, OA Orlov, LK
Citation: Le. Vorobiev et al., Emission and absorption of IR radiation in Ge/GeSi quantum wells in lateral electric fields, IAN FIZ, 63(2), 1999, pp. 339-347
Role of p-doping profile and regrowth on the static characteristics of 1.3-mu m MQW InGaAsP-InP lasers: Experiment and modeling
Authors: Belenky, GL Reynolds, CL Donetsky, DV Shtengel, GE Hybertsen, MS Alam, MA Baraff, GA Smith, RK Kazarinov, RF Winn, J Smith, LE
Citation: Gl. Belenky et al., Role of p-doping profile and regrowth on the static characteristics of 1.3-mu m MQW InGaAsP-InP lasers: Experiment and modeling, IEEE J Q EL, 35(10), 1999, pp. 1515-1520
Direct measurements of heterobarrier leakage current and modal gain in 2.3mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers
Authors: Donetsky, DV Belenky, GL Garbuzov, DZ Lee, H Martinelli, RU Taylor, G Luryi, S Connolly, JC
Citation: Dv. Donetsky et al., Direct measurements of heterobarrier leakage current and modal gain in 2.3mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers, ELECTR LETT, 35(4), 1999, pp. 298-299
Hot-electron far-infrared intrasubband absorption and emission in quantum wells
Authors: Towe, E Vorobjev, LE Danilov, SN Kochegarov, YV Firsov, DA Donetsky, DV
Citation: E. Towe et al., Hot-electron far-infrared intrasubband absorption and emission in quantum wells, APPL PHYS L, 75(19), 1999, pp. 2930-2932
Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers
Authors: Andreev, AD Donetsky, DV
Citation: Ad. Andreev et Dv. Donetsky, Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers, APPL PHYS L, 74(19), 1999, pp. 2743-2745
Risultati: 1-8 |