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Results: 1-7 |
Results: 7

Authors: Toth, AL Dozsa, L Gyulai, J Giannazzo, F Raineri, V
Citation: Al. Toth et al., SCTS: scanning capacitance transient spectroscopy, MAT SC S PR, 4(1-3), 2001, pp. 89-91

Authors: Pasquariello, D Camacho, M Hjort, K Dozsa, L Szentpali, B
Citation: D. Pasquariello et al., Evaluation of InP-to-silicon heterobonding, MAT SCI E B, 80(1-3), 2001, pp. 134-137

Authors: Horvath, ZJ Makhniy, VP Demych, MV Van Tuyen, V Balazs, J Reti, I Gorley, PM Ulyanitsky, KS Horley, PP Stifter, D Sitter, H Dozsa, L
Citation: Zj. Horvath et al., Electrical and photoelectrical behaviour of CdTe structures, MAT SCI E B, 80(1-3), 2001, pp. 156-159

Authors: Dozsa, L Horvath, ZJ Molnar, GL Peto, G Dimitriadis, CA Papadimitriou, L Brini, J Kamarinos, G
Citation: L. Dozsa et al., Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si, SEMIC SCI T, 15(7), 2000, pp. 653-657

Authors: Dozsa, L Horvath, ZJ Van Tuyen, V Podor, B Mohacsy, T Franchi, S Frigeri, P Gombia, E Mosca, R
Citation: L. Dozsa et al., The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures, MICROEL ENG, 51-2, 2000, pp. 85-92

Authors: Horvath, ZJ Dozsa, L Van Tuyen, V Podor, B Nemcsics, A Frigeri, P Gombia, E Mosca, R Franchi, S
Citation: Zj. Horvath et al., Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures, THIN SOL FI, 367(1-2), 2000, pp. 89-92

Authors: Horvath, ZJ Gombia, E Pal, D Kovacsics, C Capannese, G Pinter, I Adam, M Mosca, R Van Tuyen, V Dozsa, L
Citation: Zj. Horvath et al., Effect of defect bands on the electrical characteristics of irradiated GaAs and Si, PHYS ST S-A, 171(1), 1999, pp. 311-317
Risultati: 1-7 |