AAAAAA

   
Results: 1-9 |
Results: 9
Silicon-on-insulator non-volatile field-effect transistor memory
Authors: Schwank, JR Shaneyfelt, MR Meisenheimer, TL Draper, BL Vanhesden, K Fleetwood, DM
Citation: Jr. Schwank et al., Silicon-on-insulator non-volatile field-effect transistor memory, MICROEL ENG, 59(1-4), 2001, pp. 253-258
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
Authors: Dodd, PE Shaneyfelt, MR Walsh, DS Schwank, JR Hash, GL Loemker, RA Draper, BL Winokur, PS
Citation: Pe. Dodd et al., Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE NUCL S, 47(6), 2000, pp. 2165-2174
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's
Authors: Pan, W Tsui, DC Draper, BL
Citation: W. Pan et al., Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's, PHYS REV B, 59(15), 1999, pp. 10208-10211
A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films
Authors: Vanheusden, K Warren, WL Devine, RAB Fleetwood, DM Draper, BL Schwank, JR
Citation: K. Vanheusden et al., A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films, J NON-CRYST, 254, 1999, pp. 1-10
BUSFET - A radiation-hardened SOI transistor
Authors: Schwank, JR Shaneyfelt, MR Draper, BL Dodd, PE
Citation: Jr. Schwank et al., BUSFET - A radiation-hardened SOI transistor, IEEE NUCL S, 46(6), 1999, pp. 1809-1816
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
Authors: Vanheusden, K Warren, WL Fleetwood, DM Schwank, JR Shaneyfelt, MR Draper, BL Winokur, PS Devine, RAB Archer, LB Brown, GA Wallace, RM
Citation: K. Vanheusden et al., Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, APPL PHYS L, 73(5), 1999, pp. 674-676
The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films
Authors: Vanheusden, K Fleetwood, DM Shaneyfelt, MR Draper, BL Schwank, JR
Citation: K. Vanheusden et al., The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films, IEEE NUCL S, 45(6), 1998, pp. 2391-2397
Challenges in hardening technologies using shallow-trench isolation
Authors: Shaneyfelt, MR Dodd, PE Draper, BL Flores, RS
Citation: Mr. Shaneyfelt et al., Challenges in hardening technologies using shallow-trench isolation, IEEE NUCL S, 45(6), 1998, pp. 2584-2592
Risultati: 1-9 |