Authors: EBEOGLU MA TEMURTAS F OZTURK ZZ

Citation: Ma. Ebeoglu et al., AG N-GAAS SCHOTTKY MIS DIODES WITH SURFACE INSULATING LAYERS PREPAREDUSING (NH4)(2)S SOLUTIONS WITHOUT WATER/, Solid-state electronics, 42(1), 1998, pp. 23-27

Authors: SAGLAM M TURUT A NUHOGLU C EFEOGLU H KILICOGLU T EBEOGLU MA

Citation: M. Saglam et al., INFLUENCES OF THERMAL ANNEALING, THE ELECTROLYTE PH, AND CURRENT-DENSITY ON THE INTERFACE STATE DENSITY DISTRIBUTION OF ANODIC MOS STRUCTURES, Applied physics A: Materials science & processing, 65(1), 1997, pp. 33-37

Authors: KILICOGLU T OZTURK ZZ EBEOGLU MA TURUT A OZDEMIR M ALTINDAL A

Citation: T. Kilicoglu et al., EFFECTS OF ELECTROLYTE PH ON ELECTRICAL-PROPERTIES OF THE INTERFACE BETWEEN N-INSB AND ITS ANODIC NATIVE-OXIDE, Indian Journal of Pure & Applied Physics, 33(4), 1995, pp. 205-209

Authors: OZTURK ZZ EBEOGLU MA

Citation: Zz. Ozturk et Ma. Ebeoglu, STUDY ON INTERFACE PROPERTIES OF GAAS AO/AL STRUCTURES USING THE THERMALLY STIMULATED CURRENT (TSC) METHOD/, Physica status solidi. a, Applied research, 138(2), 1993, pp. 631-638

Authors: KILICOGLU T OZTURK ZZ EBEOGLU MA GULSUN Z

Citation: T. Kilicoglu et al., EFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI ANODIC OXIDE INTERFACES/, Indian Journal of Pure & Applied Physics, 31(10), 1993, pp. 718-720