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Results: 1-18 |
Results: 18
TIME-RESOLVED RELAXATION OSCILLATIONS IN GAIN-CLAMPED SEMICONDUCTOR OPTICAL AMPLIFIERS BY PUMP AND PROBE MEASUREMENTS
Authors: HESSLER T HAACKE S PLEUMEEKERS JL SELBMANN PE DUPERTUIS MA DEVEAUD B TAYLOR RA DOUSSIERE P BACHMANN M DUCELLIER T EMERY JY
Citation: T. Hessler et al., TIME-RESOLVED RELAXATION OSCILLATIONS IN GAIN-CLAMPED SEMICONDUCTOR OPTICAL AMPLIFIERS BY PUMP AND PROBE MEASUREMENTS, Quantum and semiclassical optics, 9(5), 1997, pp. 675-679
MONOLITHIC INTEGRATION OF SPOT-SIZE CONVERTERS WITH 1.3-MU-M LASERS AND 1.55-MU-M POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIERS
Authors: LESTRA A EMERY JY
Citation: A. Lestra et Jy. Emery, MONOLITHIC INTEGRATION OF SPOT-SIZE CONVERTERS WITH 1.3-MU-M LASERS AND 1.55-MU-M POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIERS, IEEE journal of selected topics in quantum electronics, 3(6), 1997, pp. 1429-1440
DIRECT OBSERVATION IN THE TEMPORAL DOMAIN OF RELAXATION OSCILLATIONS IN A SEMICONDUCTOR-LASER
Authors: HESSLER T HAACKE S PLEUMEEKERS JL SELBMANN PE DUPERTUIS MA DEVEAUD B DOUSSIERE P BACHMANN M EMERY JY DUCELLIER T TAYLOR RA
Citation: T. Hessler et al., DIRECT OBSERVATION IN THE TEMPORAL DOMAIN OF RELAXATION OSCILLATIONS IN A SEMICONDUCTOR-LASER, Physica status solidi. b, Basic research, 204(1), 1997, pp. 574-576
THEORETICAL OPTIMIZATION OF V-SHAPED GAINASP QUANTUM-WELL LASERS GROWN ON INP SUBSTRATES
Authors: ISSANCHOU O BARRAU J MARIE X EMERY JY FORTIN C GOLDSTEIN L
Citation: O. Issanchou et al., THEORETICAL OPTIMIZATION OF V-SHAPED GAINASP QUANTUM-WELL LASERS GROWN ON INP SUBSTRATES, IEEE journal of quantum electronics, 33(12), 1997, pp. 2277-2281
HIGH-PERFORMANCE 1.55-MU-M POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIER BASED ON LOW-TENSILE-STRAINED BULK GAINASP
Authors: EMERY JY DUCELLIER T BACHMANN M DOUSSIERE P POMMEREAU F NGO R GABORIT F GOLDSTEIN L LAUBE G BARRAU J
Citation: Jy. Emery et al., HIGH-PERFORMANCE 1.55-MU-M POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIER BASED ON LOW-TENSILE-STRAINED BULK GAINASP, Electronics Letters, 33(12), 1997, pp. 1083-1084
STABILITY EVALUATION OF A RIDGE-INTEGRATED LASER MODULATOR BASED ON ABUTT-COUPLING APPROACH
Authors: HORNUNG V LEDU F STARCK C GELLY G EMERY JY CHAUMONT C BODERE A HACHE C LEGOUZIEGOU O DEROUIN E MICHAUD G MATABON M VINCHANT JF LESTERLIN D
Citation: V. Hornung et al., STABILITY EVALUATION OF A RIDGE-INTEGRATED LASER MODULATOR BASED ON ABUTT-COUPLING APPROACH, IEEE photonics technology letters, 8(9), 1996, pp. 1136-1138
POLARIZATION-INSENSITIVE CLAMPED-GAIN SOA WITH INTEGRATED SPOT-SIZE CONVERTER AND DBR GRATINGS FOR WDM APPLICATIONS AT 1.55-MU-M WAVELENGTH
Authors: BACHMANN M DOUSSIERE P EMERY JY NGO R POMMEREAU F GOLDSTEIN L SOULAGE G JOURDAN A
Citation: M. Bachmann et al., POLARIZATION-INSENSITIVE CLAMPED-GAIN SOA WITH INTEGRATED SPOT-SIZE CONVERTER AND DBR GRATINGS FOR WDM APPLICATIONS AT 1.55-MU-M WAVELENGTH, Electronics Letters, 32(22), 1996, pp. 2076-2078
10GBIT S TRANSMISSION OVER 90-127 KM IN THE WAVELENGTH RANGE 1530-1560NM USING AN INP-BASED MACH-ZEHNDER MODULATOR/
Authors: DELANSAY P PENNINCKX D ARTIGAUD S PROVOST JG HEBERT JP BOUCHEREZ E EMERY JY FORTIN C LEGOUEZIGOU O
Citation: P. Delansay et al., 10GBIT S TRANSMISSION OVER 90-127 KM IN THE WAVELENGTH RANGE 1530-1560NM USING AN INP-BASED MACH-ZEHNDER MODULATOR/, Electronics Letters, 32(19), 1996, pp. 1820-1821
PHOTOLUMINESCENCE STUDY OF BAND-GAP ALIGNMENT OF INTERMIXED INASP INGAASP SUPERLATTICES/
Authors: FRANCIS C BOUCAUD P JULIEN FH EMERY JY GOLDSTEIN L
Citation: C. Francis et al., PHOTOLUMINESCENCE STUDY OF BAND-GAP ALIGNMENT OF INTERMIXED INASP INGAASP SUPERLATTICES/, Journal of applied physics, 78(3), 1995, pp. 1944-1947
DIRECT MEASUREMENT OF LATERAL ELASTIC MODULATIONS IN A ZERO-NET STRAINED GAINASP INP MULTILAYER/
Authors: PONCHET A ROCHER A EMERY JY STARCK C GOLDSTEIN L
Citation: A. Ponchet et al., DIRECT MEASUREMENT OF LATERAL ELASTIC MODULATIONS IN A ZERO-NET STRAINED GAINASP INP MULTILAYER/, Journal of applied physics, 77(5), 1995, pp. 1977-1984
X-RAY, REFLECTION HIGH ELECTRON-ENERGY DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF INSE AND GAMMA-IN2SE3 THIN-FILMS GROWN BY MOLECULAR-BEAM DEPOSITION
Authors: BRAHIMOTSMANE L EMERY JY EDDRIEF M
Citation: L. Brahimotsmane et al., X-RAY, REFLECTION HIGH ELECTRON-ENERGY DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF INSE AND GAMMA-IN2SE3 THIN-FILMS GROWN BY MOLECULAR-BEAM DEPOSITION, Thin solid films, 237(1-2), 1994, pp. 291-296
SELECTIVE BAND-GAP BLUESHIFTING OF INGAASP INGAAS(P) QUANTUM-WELLS BYTHERMAL INTERMIXING WITH PHOSPHORUS PRESSURE AND DIELECTRIC CAPPING/
Authors: FRANCIS C JULIEN FH EMERY JY SIMES R GOLDSTEIN L
Citation: C. Francis et al., SELECTIVE BAND-GAP BLUESHIFTING OF INGAASP INGAAS(P) QUANTUM-WELLS BYTHERMAL INTERMIXING WITH PHOSPHORUS PRESSURE AND DIELECTRIC CAPPING/, Journal of applied physics, 75(7), 1994, pp. 3607-3610
HIGH FM BANDWIDTH OF DBR LASER INCLUDING BUTT-JOINTED ELECTROOPTICAL WAVELENGTH TUNING SECTIONS (VOL 30, PG 311, 1994)
Authors: LANGANAY J GAUMONTGOARIN E EMERY JY LABOURIE C PROVOST JG STARCK C LEGOUEZIGOU Q LESTERLIN D
Citation: J. Langanay et al., HIGH FM BANDWIDTH OF DBR LASER INCLUDING BUTT-JOINTED ELECTROOPTICAL WAVELENGTH TUNING SECTIONS (VOL 30, PG 311, 1994), Electronics Letters, 30(7), 1994, pp. 608-608
HIGH FM BANDWIDTH OF DBR LASER INCLUDING BUTT-JOINTED ELECTROOPTICAL WAVELENGTH TUNING SECTIONS
Authors: LANGANAY J GAUMONTGOARIN E EMERY JY LABOURIE C PROVOST JG STARCK C LEGOUEZIGOU O LESTERLIN D
Citation: J. Langanay et al., HIGH FM BANDWIDTH OF DBR LASER INCLUDING BUTT-JOINTED ELECTROOPTICAL WAVELENGTH TUNING SECTIONS, Electronics Letters, 30(4), 1994, pp. 311-312
LATERAL THICKNESS MODULATIONS IN ALTERNATE TENSILE-COMPRESSIVE STRAINED GAINASP MULTILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: PONCHET A ROCHER A EMERY JY STARCK C GOLDSTEIN L
Citation: A. Ponchet et al., LATERAL THICKNESS MODULATIONS IN ALTERNATE TENSILE-COMPRESSIVE STRAINED GAINASP MULTILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 241-243
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF ALTERNATED TENSILE COMPRESSIVE STRAINED GAINASP MULTIPLE-QUANTUM WELLS EMITTING AT 1.5 MU-M
Authors: EMERY JY STARCK C GOLDSTEIN L PONCHET A ROCHER A
Citation: Jy. Emery et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF ALTERNATED TENSILE COMPRESSIVE STRAINED GAINASP MULTIPLE-QUANTUM WELLS EMITTING AT 1.5 MU-M, Journal of crystal growth, 127(1-4), 1993, pp. 241-245
LATERAL MODULATIONS IN ZERO-NET-STRAINED GAINASP MULTILAYERS GROWN BYGAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: PONCHET A ROCHER A EMERY JY STARCK C GOLDSTEIN L
Citation: A. Ponchet et al., LATERAL MODULATIONS IN ZERO-NET-STRAINED GAINASP MULTILAYERS GROWN BYGAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(6), 1993, pp. 3778-3782
LOW SPECTRAL CHIRP AND LARGE ELECTROABSORPTION IN A STRAINED INGAASP INGAASP MULTIPLE-QUANTUM-WELL MODULATOR/
Authors: LANGANAY J STARCK C BOULOU M NICOLARDOT M EMERY JY FORTIN C AUBERT P LESTERLIN D
Citation: J. Langanay et al., LOW SPECTRAL CHIRP AND LARGE ELECTROABSORPTION IN A STRAINED INGAASP INGAASP MULTIPLE-QUANTUM-WELL MODULATOR/, Applied physics letters, 62(17), 1993, pp. 2066-2068
Risultati: 1-18 |