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Results: 1-7 |
Results: 7
A SOFT THRESHOLD LUCKY ELECTRON MODEL FOR EFFICIENT AND ACCURATE NUMERICAL DEVICE SIMULATION
Authors: JUNGEMANN C THOMA R ENGL WL
Citation: C. Jungemann et al., A SOFT THRESHOLD LUCKY ELECTRON MODEL FOR EFFICIENT AND ACCURATE NUMERICAL DEVICE SIMULATION, Solid-state electronics, 39(7), 1996, pp. 1079-1086
LEVELIZED INCOMPLETE LU FACTORIZATION AND ITS APPLICATION TO LARGE-SCALE CIRCUIT SIMULATION
Authors: EICKHOFF KM ENGL WL
Citation: Km. Eickhoff et Wl. Engl, LEVELIZED INCOMPLETE LU FACTORIZATION AND ITS APPLICATION TO LARGE-SCALE CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(6), 1995, pp. 720-727
INFLUENCE OF ENERGY-TRANSPORT RELATED EFFECTS ON NPN BJT DEVICE PERFORMANCE AND ECL GATE DELAY ANALYZED BY 2D PARALLEL MIXED LEVEL DEVICE CIRCUIT SIMULATION
Authors: STECHER M MEINERZHAGEN B BORK I KRUCKEN JMJ MAAS P ENGL WL
Citation: M. Stecher et al., INFLUENCE OF ENERGY-TRANSPORT RELATED EFFECTS ON NPN BJT DEVICE PERFORMANCE AND ECL GATE DELAY ANALYZED BY 2D PARALLEL MIXED LEVEL DEVICE CIRCUIT SIMULATION, IEICE transactions on electronics, E77C(2), 1994, pp. 200-205
A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON
Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
COMPUTER-AIDED-DESIGN AND SCALING OF DEEP-SUBMICRON CMOS
Authors: SPECKS JW ENGL WL
Citation: Jw. Specks et Wl. Engl, COMPUTER-AIDED-DESIGN AND SCALING OF DEEP-SUBMICRON CMOS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(9), 1993, pp. 1357-1367
SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS
Authors: JUNGEMANN C EMUNDS A ENGL WL
Citation: C. Jungemann et al., SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS, Solid-state electronics, 36(11), 1993, pp. 1529-1540
ON THE VALIDITY OF THE RELAXATION-TIME APPROXIMATION FOR SILICON IN THE REGION OF IRREVERSIBLE THERMODYNAMICS
Authors: THOMA R WESTERHOLZ KP PEIFER HJ ENGL WL
Citation: R. Thoma et al., ON THE VALIDITY OF THE RELAXATION-TIME APPROXIMATION FOR SILICON IN THE REGION OF IRREVERSIBLE THERMODYNAMICS, Semiconductor science and technology, 7(3B), 1992, pp. 328-330
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