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Results: 1-25/158
Authors:
ENOKI T
YOKOYAMA H
UMEDA Y
OTSUJI T
Citation: T. Enoki et al., ULTRAHIGH-SPEED INTEGRATED-CIRCUITS USING INP-BASED HEMTS, JPN J A P 1, 37(3B), 1998, pp. 1359-1364
Authors:
SUEMITSU T
ENOKI T
YOKOYAMA H
ISHII Y
Citation: T. Suemitsu et al., IMPROVED RECESSED-GATE STRUCTURE FOR SUB-0.1-MU-M-GATE INP-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS, JPN J A P 1, 37(3B), 1998, pp. 1365-1372
Authors:
WADA Y
ENOKI T
Citation: Y. Wada et T. Enoki, DEGRADATION MODES OF INGAAS P-N DIODES OPERATED AT FORWARD BIASES, JPN J A P 1, 37(10), 1998, pp. 5510-5514
Authors:
NAKATSUJI S
SAIGA M
HAGA N
NAITO A
HIRAYAMA T
NAKAGAWA M
ODA Y
ANZAI H
SUZUKI K
ENOKI T
MITO M
TAKEDA K
Citation: S. Nakatsuji et al., 2-(2'-HALOPHENYL)-ALPHA-NITRONYL NITROXIDES, New journal of chemistry, 22(3), 1998, pp. 275-280
Authors:
XU D
ENOKI T
UMEDA Y
SUEMITSU T
YAMANE Y
ISHII Y
Citation: D. Xu et al., SELF-COMPENSATION OF SHORT-CHANNEL EFFECTS IN SUB-0.1-MU-M INALAS INGAAS MODFETS BY ELECTROCHEMICAL ETCHING/, IEEE electron device letters, 19(12), 1998, pp. 484-486
Authors:
XU D
ENOKI T
ISHII Y
Citation: D. Xu et al., THE IMPORTANCE OF ELECTROCHEMISTRY-RELATED ETCHING IN THE GATE-GROOVEFABRICATION FOR INALAS INGAAS HFETS/, IEEE electron device letters, 19(1), 1998, pp. 10-12
Authors:
XU D
ENOKI T
SUEMITSU T
UMEDA Y
YOKOYAMA H
ISHII Y
Citation: D. Xu et al., ELECTROCHEMICALLY INDUCED ASYMMETRICAL ETCHING IN INALAS INGAAS HETEROSTRUCTURES FOR MODFET GATE-GROOVE FABRICATION/, Journal of electronic materials, 27(7), 1998, pp. 51-53
Authors:
ENOKI T
GOTO S
KAMADA N
HAYASHI D
ESATO K
Citation: T. Enoki et al., CHRONOLOGICAL ALTERATION OF SUPPRESSIVE EFFECTS OF SERUM FROM LIVER GRAFTED RATS AGAINST GRAFT-VERSUS-HOST DISEASE, Transplantation proceedings, 30(7), 1998, pp. 3258-3259
Authors:
SAKATA J
SATO H
MIYAZAKI A
ENOKI T
OKANO Y
KATO R
Citation: J. Sakata et al., SUPERCONDUCTIVITY IN NEW ORGANIC CONDUCTOR KAPPA-(BEDSE-TTF)(2)CUN(CN)(2)BR, Solid state communications, 108(6), 1998, pp. 377-381
Authors:
ENOKI T
UMEYAMA T
MIYAZAKI A
NISHIKAWA H
IKEMOTO I
KIKUCHI K
Citation: T. Enoki et al., NOVEL METALLIC STATE CARRYING LOCALIZED SPINS IN THE MOLECULAR CONDUCTOR (DMET)(2)FEBR4, Physical review letters, 81(17), 1998, pp. 3719-3722
Authors:
KOBAYASHI N
ENOKI T
ISHII C
KANEKO K
ENDO M
Citation: N. Kobayashi et al., GAS-ADSORPTION EFFECTS ON STRUCTURAL AND ELECTRICAL-PROPERTIES OF ACTIVATED CARBON-FIBERS, The Journal of chemical physics, 109(5), 1998, pp. 1983-1990
Authors:
MIYASAKA H
OKAWA H
MIYAZAKI A
ENOKI T
Citation: H. Miyasaka et al., SYNTHESIS, CRYSTAL AND NETWORK STRUCTURES, AND MAGNETIC-PROPERTIES OFA HYBRID LAYERED COMPOUND - [K(18-CR)(2-PROH)(2)][(MN(ACACEN))(2)(FE(CN)(6))] (18-CR=18-CROWN-6-ETHER, ACEN=N,N'-ETHYLENEBIS(ACETYLACETONYLIDENEIMINATE)), Inorganic chemistry, 37(19), 1998, pp. 4878-4883
Authors:
UMEDA Y
OSAFUNE K
ENOKI T
YOKOYAMA H
ISHII Y
IMAMURA Y
Citation: Y. Umeda et al., OVER-60-GHZ DESIGN TECHNOLOGY FOR AN SCFL DYNAMIC FREQUENCY-DIVIDER USING INP-BASED HEMTS, IEEE transactions on microwave theory and techniques, 46(9), 1998, pp. 1209-1214
Authors:
SUEMITSU T
ENOKI T
SANO N
TOMIZAWA M
ISHII Y
Citation: T. Suemitsu et al., AN ANALYSIS OF THE KINK PHENOMENA IN INALAS INGAAS HEMTS USING 2-DIMENSIONAL DEVICE SIMULATION/, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2390-2399
Authors:
OTSUJI T
MURATA K
ENOKI T
UMEDA Y
Citation: T. Otsuji et al., AN 80-GBIT S MULTIPLEXER IC USING INALAS/INGAAS/INP HEMTS/, IEEE journal of solid-state circuits, 33(9), 1998, pp. 1321-1327
Authors:
MURATA K
OTSUJI T
ENOKI T
UMEDA Y
Citation: K. Murata et al., EXCLUSIVE OR NOR IC FOR GREATER-THAN-40GBIT/S OPTICAL-TRANSMISSION SYSTEMS/, Electronics Letters, 34(8), 1998, pp. 764-765
Authors:
SUEMITSU T
ENOKI T
YOKOYAMA H
UMEDA Y
ISHII Y
Citation: T. Suemitsu et al., IMPACT OF 2-STEP-RECESSED GATE STRUCTURE ON RF PERFORMANCE OF INP-BASED HEMTS, Electronics Letters, 34(2), 1998, pp. 220-222
Authors:
XU D
ENOKI T
SUEMITSU T
UMEDA Y
YAMANE Y
ISHII Y
Citation: D. Xu et al., IMPROVING THRESHOLD-VOLTAGE UNIFORMITY OF 0.1-MU-M INP-BASED MODFETS WITH DIFFERENT GATE LAYOUTS, Electronics Letters, 34(16), 1998, pp. 1614-1615
Authors:
OTSUJI T
MURATA K
ENOKI T
UMEDA Y
Citation: T. Otsuji et al., 80GBIT S MULTIPLEXER IC USING INALAS/INGAAS/INP HEMT/, Electronics Letters, 34(1), 1998, pp. 113-114
Authors:
IWAMURO Y
MIWA S
MINOWA T
ENOKI T
ZHANG XF
ISHIKAWA M
HASHIMOTO N
MASAKI T
Citation: Y. Iwamuro et al., ACTIVATION OF 2 TYPES OF CA2-PERMEABLE NONSELECTIVE CATION CHANNEL BYENDOTHELIN-1 IN A7R5 CELLS(), British Journal of Pharmacology, 124(7), 1998, pp. 1541-1549
Authors:
HIRATA S
ENOKI T
KITAMURA R
VINH VH
NAKAMURA K
MORI K
Citation: S. Hirata et al., EFFECTS OF ISOFLURANE ON RECEPTOR-OPERATED CA2-MUSCLE( CHANNELS IN RAT AORTIC SMOOTH), British Journal of Anaesthesia, 81(4), 1998, pp. 578-583
Authors:
OHTSUKA K
ENOKI T
Citation: K. Ohtsuka et T. Enoki, TRANSCRANIAL MAGNETIC STIMULATION OVER THE POSTERIOR CEREBELLUM DURING SMOOTH-PURSUIT EYE-MOVEMENTS IN MAN, Brain, 121, 1998, pp. 429-435
Authors:
KONDO M
NOMURA R
ENOKI T
Citation: M. Kondo et al., A SIMPLE DEVICE TO PREVENT BACK FLOW OF BLOOD INTO THE INTRAVENOUS LINE, Anesthesiology, 88(6), 1998, pp. 1693-1693
Authors:
SHIGEKAWA N
ENOKI T
FURUTA T
Citation: N. Shigekawa et al., ELECTROLUMINESCENCE FROM AN INGAAS-BASED HIGH-ELECTRON-MOBILITY TRANSISTOR DESIGNED FOR HIGH-SPEED OPERATION, JPN J A P 2, 36(7B), 1997, pp. 906-908
Authors:
NAKATSUJI S
TAKAI A
NISHIKAWA K
MORIMOTO Y
YASUOKA N
SUZUKI K
ENOKI T
ANZAI H
Citation: S. Nakatsuji et al., MAGNETIC-PROPERTIES OF CHARGE-TRANSFER COMPLEXES BASED ON TEMPO RADICALS, Chemical communications, (3), 1997, pp. 275-276