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Results:
1-7
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Results: 7
Authors:
LAUHAKANGAS R
LAURIKAINEN P
ORAVA R
OSTONEN R
PYYHTIA J
SCHULMAN T
SPARTIOTIS C
HIETANEN I
MATIKKALA M
ERANEN S
VIROLAINEN T
Citation: R. Lauhakangas et al., BEAM TEST-RESULTS OF A 60 CM LONG SILICON MICROSTRIP DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 364(1), 1995, pp. 74-78
Authors:
JALAS P
SIPILA H
ERANEN S
LEINONEN K
Citation: P. Jalas et al., NEAR ROOM-TEMPERATURE ENERGY-DISPERSIVE DETECTORS PROCESSED ON HIGH-PURITY SILICON, X-ray spectrometry, 24(2), 1995, pp. 63-69
Authors:
GRAHN K
ERANEN S
KUIVALAINEN P
Citation: K. Grahn et al., DIAMOND POWER TRANSISTOR PERFORMANCE, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1301-1307
Authors:
GRAHN KJ
KUIVALAINEN P
ERANEN S
Citation: Kj. Grahn et al., EFFECT OF PARTIAL IONIZATION AND THE CHARACTERISTICS OF LATERAL POWERDIAMOND MESFETS, Physica scripta. T, 54, 1994, pp. 151-153
Authors:
XIA Z
SAARILAHTI J
RISTOLAINEN E
ERANEN S
RONKAINEN H
KUIVALAINEN P
PAINE D
TUOMI T
Citation: Z. Xia et al., AMORPHIZATION OF SILICON BY HIGH-DOSE GERMANIUM ION-IMPLANTATION WITHNO EXTERNAL COOLING MECHANISM, Applied surface science, 78(3), 1994, pp. 321-330
Authors:
XIA Z
SAARILAHTI J
RONKAINEN H
ERANEN S
SUNI I
MOLARIUS J
KUIVALAINEN P
RISTOLAINEN E
TUOMI T
Citation: Z. Xia et al., RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 247-254
Authors:
HUHTINEN M
ORAVA R
PIMIA M
TUUVA T
YLOSTALO J
OSTERBERG K
ERANEN S
LEINONEN K
HIETANEN I
TURCHETTA R
SCHAEFFER M
Citation: M. Huhtinen et al., SINGLE-SIDED STEREO ANGLE SILICON STRIP DETECTOR, IEEE transactions on nuclear science, 40(4), 1993, pp. 335-338
Risultati:
1-7
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