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Results:
1-22
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Results: 22
Authors:
MOULAYAT NE
ETCHEBERRY A
MATHIEU C
SUTTER EMM
Citation: Ne. Moulayat et al., ELECTROCHEMICAL CHARACTERIZATION OF A SEMICONDUCTOR-METAL JUNCTION - N-TYPE INP-VERTICAL-BAR-CU - INFLUENCE OF THE STRUCTURE OF THE METALLIC LAYER, Journal of electroanalytical chemistry [1992], 453(1-2), 1998, pp. 129-137
Authors:
SUTTER E
VIGNERON J
GERARD I
ETCHEBERRY A
Citation: E. Sutter et al., USE OF THE PHOTOLUMINESCENCE INTENSITY VARIATION AS AN IN-SITU PROBE FOR ELECTROCHEMICAL COPPER DEPOSITION ON A P-TYPE GAAS ELECTRODE, Comptes rendus de l'Academie des sciences. Serie IIc, Chimie, 1(11), 1998, pp. 719-724
Authors:
ROTHSCHILD A
DEBIEMMECHOUVY C
ETCHEBERRY A
Citation: A. Rothschild et al., STUDY OF THE INTERACTION AT REST POTENTIAL BETWEEN SILICOTUNGSTIC HETEROPOLYANION SOLUTION AND GAAS SURFACE, Applied surface science, 135(1-4), 1998, pp. 65-70
Authors:
ETCHEBERRY A
IRANZOMARIN F
NOVAKOVIC E
TRIBOULET R
DEBIEMMECHOUVY C
Citation: A. Etcheberry et al., CONTRIBUTION TO THE UNDERSTANDING OF THE CDTE AND CD1-YZNYTE SURFACE-CHEMISTRY, Journal of crystal growth, 185, 1998, pp. 213-217
Authors:
LEFEVRE F
LORANS D
DEBIEMMECHOUVY C
ETCHEBERRY A
BALLUTAUD D
TRIBOULET R
Citation: F. Lefevre et al., OXIDATION OF HG0.8CD0.2TE IN BASIC-MEDIA - AN XPS AND SPECTROSCOPIC ELLIPSOMETRY STUDY, Journal of crystal growth, 185, 1998, pp. 1237-1241
Authors:
SUTTER EMM
MATHIEU C
MOULAYAT NE
ETCHEBERRY A
Citation: Emm. Sutter et al., EFFECT OF COPPER COATING ON THE BEHAVIOR OF P-INP ELECTRODES, Journal of electroanalytical chemistry [1992], 429(1-2), 1997, pp. 101-106
Authors:
IRANZOMARIN F
DEBIEMMECHOUVY C
GERARD I
VIGNERON J
TRIBOULET R
ETCHEBERRY A
Citation: F. Iranzomarin et al., ENRICHMENT IN TELLURIUM DURING PHOTODISSOLUTION ON N-CDTE IN SULFURIC-ACID-SOLUTION, Electrochimica acta, 42(2), 1997, pp. 211-221
Authors:
ETCHEBERRY A
GONCALVES AM
MATHIEU C
HERLEM M
Citation: A. Etcheberry et al., CATHODIC DECOMPOSITION OF N-INP DURING HYDROGEN EVOLUTION IN LIQUID-AMMONIA, Journal of the Electrochemical Society, 144(3), 1997, pp. 928-935
Authors:
GERARD I
IRANZOMARIN F
VIGNERON J
ETCHEBERRY A
Citation: I. Gerard et al., MODELING OF N-TYPE CDTE PHOTOLUMINESCENCE VARIATION WITH POLARIZATION- A PROBE OF THE SHIFT OF SEMICONDUCTOR BAND EDGES, Journal of electroanalytical chemistry [1992], 401(1-2), 1996, pp. 57-63
Authors:
DEBIEMMECHOUVY C
MARIN FI
ROLL U
BUJOR M
ETCHEBERRY A
Citation: C. Debiemmechouvy et al., DETECTION OF CADMIUM-OXIDES ON A CDTE SUBSTRATE BY X-AES, Surface science, 352, 1996, pp. 495-498
Authors:
MARIN FI
DEBIEMMECHOUVY C
VIGNERON J
TRIBOULET R
ETCHEBERRY A
Citation: Fi. Marin et al., CE4- A NEW ETCHING AGENT FOR CADMIUM TELLURIDE( ), JPN J A P 2, 34(10B), 1995, pp. 1344-1347
Authors:
SZEKELY M
BERNARD E
CAILLOT E
HERLEM M
ETCHEBERRY A
MATHIEU C
FAHYS B
Citation: M. Szekely et al., ELECTROCHEMICAL-BEHAVIOR OF TIN OXIDE IN THE PRESENCE OF LITHIUM ION IN ACETONITRILE, Journal of electroanalytical chemistry [1992], 391(1-2), 1995, pp. 69-75
Authors:
BALLUTAUD D
DEBIEMMECHOUVY C
ETCHEBERRY A
DEMIERRY P
SVOB L
Citation: D. Ballutaud et al., REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR, Applied surface science, 84(2), 1995, pp. 187-192
Authors:
MARIN FI
VIGNERON J
LINCOT D
ETCHEBERRY A
DEBIEMMECHOUVY C
Citation: Fi. Marin et al., SURFACE EVOLUTION OF N-TYPE CDTE IN ACIDIC MEDIUM IN THE PRESENCE OF CE4+ IONS, Journal of physical chemistry, 99(41), 1995, pp. 15198-15207
Authors:
DEBIEMMECHOUVY C
FILLIERES R
VIGNERON J
KHOUMRI EM
LEROY D
ETCHEBERRY A
Citation: C. Debiemmechouvy et al., ELECTROCHEMICAL CHARACTERIZATION OF GASB IN THE PRESENCE OF CERIUM SPECIES, Electrochimica acta, 40(2), 1995, pp. 189-196
Authors:
IRANZOMARIN F
DEBIEMMECHOUVY C
HERLEM M
SCULFORT JL
ETCHEBERRY A
Citation: F. Iranzomarin et al., ELECTROCHEMICAL TECHNIQUES FOR THE ELUCIDATION OF THE INTERFACE STRUCTURE OF THE N-INP AQUEOUS ELECTROLYTE JUNCTION/, Journal of electroanalytical chemistry [1992], 365(1-2), 1994, pp. 283-287
Authors:
JAUME J
DEBIEMMECHOUVY C
VIGNERON J
HERLEM M
KHOUMRI EM
SCULFORT JL
LEROY D
ETCHEBERRY A
Citation: J. Jaume et al., MAJORITY CARRIER INJECTION MECHANISM AT T HE SEMICONDUCTOR-ELECTROLYTE INTERFACE, Journal de physique. III, 4(2), 1994, pp. 273-291
Authors:
PEROTIN M
COUDRAY P
ETCHEBERRY A
GOUSKOV L
DEBIEMMECHOUVY C
LUQUET H
Citation: M. Perotin et al., IMPROVEMENT OF DARK CURRENT OF GA(AL)SB MESA DIODES USING (NH4)(2)S TREATMENT, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 374-378
Authors:
MARIN FI
VIGNERON J
DEBIEMMECHOUVY C
TRIBOULET R
LINCOT D
ETCHEBERRY A
Citation: Fi. Marin et al., ELECTROCHEMICAL-BEHAVIOR OF N-TYPE CDTE IN THE PRESENCE OF A MONOELECTRONIC OXIDIZING-AGENT (CE4+), Journal of the Electrochemical Society, 141(9), 1994, pp. 2409-2413
Authors:
DEMIERRY P
ETCHEBERRY A
RIZK R
ETCHEGOIN P
AUCOUTURIER M
Citation: P. Demierry et al., DEFECTS INDUCED IN P-TYPE SILICON BY PHOTOCATHODIC CHARGING OF HYDROGEN, Journal of the Electrochemical Society, 141(6), 1994, pp. 1539-1546
Authors:
CASAMASSIMA M
DARQUECERETTI E
ETCHEBERRY A
AUCOUTURIER M
Citation: M. Casamassima et al., CORRELATION BETWEEN LEWIS DONOR-ACCEPTOR PROPERTIES DETERMINED BY XPSAND BRONSTED ACID-BASE PROPERTIES DETERMINED BY REST-POTENTIAL MEASUREMENTS, FOR ALUMINUM AND SILICON-OXIDES, Journal of Materials Science, 28(15), 1993, pp. 3997-4002
Authors:
DEBIEMMECHOUVY C
BALLUTAUD D
PESANT JC
ETCHEBERRY A
Citation: C. Debiemmechouvy et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS SURFACE-EXPOSED TO A RF HYDROGEN PLASMA, Applied physics letters, 62(18), 1993, pp. 2254-2255
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1-22
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