Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG NEMIROVSKII AV UFIMTSEV VB

Citation: Vt. Bublik et al., SPECIFIC FEATURES OF DEFECT GENERATION IN SI-IMPLANTED GALLIUM-ARSENIDE UNDER RAPID PHOTON ANNEALING(), Crystallography reports, 42(2), 1997, pp. 319-322

Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKI MG NEMIROVSKI AW

Citation: Vt. Bublik et al., BEHAVIOR OF POINT RADIATION DEFECTS DURING RAPID PHOTON ANNEALING OF GAAS-LAYERS IMPLANTED WITH VARIOUS DOSES OF SI AND SE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 221-224

Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG

Citation: Vt. Bublik et al., THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES, Kristallografia, 40(1), 1995, pp. 128-136