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Results:
1-7
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Results: 7
Authors:
GERMAIN M
EVRARD R
LAMPE E
HEUKEN M
Citation: M. Germain et al., ON THE DETERMINATION OF CHARGE PROFILES IN EPITAXIAL LAYERS OF ZNSE BY CAPACITANCE MEASUREMENTS, Journal of electronic materials, 27(5), 1998, pp. 29-31
Authors:
GERMAIN M
ELYACOUBI M
EVRARD R
TAUDT W
HEUKEN M
Citation: M. Germain et al., MEASUREMENTS OF TRANSIENT PHOTOCAPACITANCE AND PHOTOCURRENT ON MOVPE-GROWN AU ZNSE/GAAS HETEROSTRUCTURES/, Journal of crystal growth, 185, 1998, pp. 199-202
Authors:
GURSKII AL
TAUDT W
LAMPE S
HAMADEH H
SAUERLANDER F
GERMAIN M
BASILAVECCHIA M
EVRARD R
YABLONSKII GP
HEUKEN M
Citation: Al. Gurskii et al., OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR, Journal of crystal growth, 170(1-4), 1997, pp. 533-536
Authors:
LAMPE S
GERMAIN M
SOLLNER J
TAUDT W
EVRARD R
HEUKEN M
Citation: S. Lampe et al., ELECTRICAL CHARACTERIZATION OF DOPED ZNSE-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 293-297
Authors:
CERTIER M
SOLTANI M
EVRARD R
KARTHEUSER E
Citation: M. Certier et al., PHOTOLUMINESCENCE OF P-CDTE - CHARACTERIZATION OF IMPURITY CENTERS BYPHONON SIDE-BAND, Journal of crystal growth, 159(1-4), 1996, pp. 879-882
Authors:
SOLTANI M
CERTIER M
EVRARD R
KARTHEUSER E
Citation: M. Soltani et al., PHOTOLUMINESCENCE OF CDTE DOPED WITH ARSENIC AND ANTIMONY ACCEPTORS -DETAILED CHARACTERIZATION OF SHALLOW CENTERS, Solid state communications, 93(5), 1995, pp. 463-463
Authors:
SOLTANI M
CERTIER M
EVRARD R
KARTHEUSER E
Citation: M. Soltani et al., PHOTOLUMINESCENCE OF CDTE DOPED WITH ARSENIC AND ANTIMONY ACCEPTORS, Journal of applied physics, 78(9), 1995, pp. 5626-5632
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1-7
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