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Results: 1-12 |
Results: 12
Quantitative TEM of point defects in Si
Authors: Eaglesham, DJ Venezia, VC Gossmann, HJ Agarwal, A
Citation: Dj. Eaglesham et al., Quantitative TEM of point defects in Si, J ELEC MICR, 49(2), 2000, pp. 293-298
Formation, evolution and annihilation of interstitial clusters in ion implanted Si
Authors: Libertino, S Coffa, S Benton, JL Halliburton, K Eaglesham, DJ
Citation: S. Libertino et al., Formation, evolution and annihilation of interstitial clusters in ion implanted Si, NUCL INST B, 148(1-4), 1999, pp. 247-251
Diffusion and transient trapping of metals in silicon
Authors: Wong-Leung, J Williams, JS Kinomura, A Nakano, Y Hayashi, Y Eaglesham, DJ
Citation: J. Wong-leung et al., Diffusion and transient trapping of metals in silicon, PHYS REV B, 59(12), 1999, pp. 7990-7998
The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon
Authors: Bourdelle, KK Eaglesham, DJ Jacobson, DC Poate, JM
Citation: Kk. Bourdelle et al., The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon, J APPL PHYS, 86(3), 1999, pp. 1221-1225
Behavior of molybdenum in silicon evaluated for integrated circuit processing
Authors: Benton, JL Jacobson, DC Jackson, B Johnson, JA Boone, T Eaglesham, DJ Stevie, FA Becerro, J
Citation: Jl. Benton et al., Behavior of molybdenum in silicon evaluated for integrated circuit processing, J ELCHEM SO, 146(5), 1999, pp. 1929-1933
The role of oxygen on the stability of gettering of metals to cavities in silicon
Authors: Williams, JS Conway, MJ Wong-Leung, J Deenapanray, PNK Petravic, M Brown, RA Eaglesham, DJ Jacobson, DC
Citation: Js. Williams et al., The role of oxygen on the stability of gettering of metals to cavities in silicon, APPL PHYS L, 75(16), 1999, pp. 2424-2426
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Authors: Venezia, VC Haynes, TE Agarwal, A Pelaz, L Gossmann, HJ Jacobson, DC Eaglesham, DJ
Citation: Vc. Venezia et al., Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon, APPL PHYS L, 74(9), 1999, pp. 1299-1301
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
Authors: Agarwal, A Gossmann, HJ Eaglesham, DJ Herner, SB Fiory, AT Haynes, TE
Citation: A. Agarwal et al., Boron-enhanced diffusion of boron from ultralow-energy ion implantation, APPL PHYS L, 74(17), 1999, pp. 2435-2437
Boron-enhanced diffusion of boron: Physical mechanisms
Authors: Agarwal, A Gossmann, HJ Eaglesham, DJ
Citation: A. Agarwal et al., Boron-enhanced diffusion of boron: Physical mechanisms, APPL PHYS L, 74(16), 1999, pp. 2331-2333
Impurity and clustering effects on defect evolution in ion-implanted Si
Authors: Libertino, S Benton, JL Coffa, S Eaglesham, DJ
Citation: S. Libertino et al., Impurity and clustering effects on defect evolution in ion-implanted Si, NUOV CIM D, 20(10), 1998, pp. 1529-1548
Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
Authors: Benton, JL Halliburton, K Libertino, S Eaglesham, DJ Coffa, S
Citation: Jl. Benton et al., Electrical signatures and thermal stability of interstitial clusters in ion implanted Si, J APPL PHYS, 84(9), 1998, pp. 4749-4756
Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
Authors: Weldon, MK Collot, M Chabal, YJ Venezia, VC Agarwal, A Haynes, TE Eaglesham, DJ Christman, SB Chaban, EE
Citation: Mk. Weldon et al., Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation, APPL PHYS L, 73(25), 1998, pp. 3721-3723
Risultati: 1-12 |