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Results: 1-16 |
Results: 16
Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures
Authors: Zakharov, ND Werner, P Gosele, U Gerth, G Cirlin, G Egorov, VA Volovik, BV
Citation: Nd. Zakharov et al., Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures, MAT SCI E B, 87(1), 2001, pp. 92-95
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Denisov, DV Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Heitz, R Bimberg, D Zakharov, ND Werner, P Gosele, U
Citation: Ge. Cirlin et al., Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties, MAT SCI E B, 80(1-3), 2001, pp. 108-111
Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems
Authors: Cirlin, GE Petrov, VN Polyakov, NK Egorov, VA Samsonenko, YB Volovik, BV Denisov, DV Ustinov, VM Alferov, ZL Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems, IAN FIZ, 65(2), 2001, pp. 219-222
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Authors: Egorov, VA Polyakov, NK Tonkikh, AA Petrov, VN Cirlin, GE Volovik, BV Zhukov, AE Musikhin, YG Cherkashin, NA Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs, APPL SURF S, 175, 2001, pp. 243-248
Recollections about M.L. Lidov - On the 75th anniversary of M.L. Lidov
Authors: Egorov, VA
Citation: Va. Egorov, Recollections about M.L. Lidov - On the 75th anniversary of M.L. Lidov, COSM RES, 39(5), 2001, pp. 421-423
Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface
Authors: Tsyrlin, GE Samsonenko, YB Petrov, VN Polyakov, NK Egorov, VA Masalov, SA Gorbenko, OM Golubok, AO Soshnikov, IP Ustinov, VM
Citation: Ge. Tsyrlin et al., Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface, TECH PHYS L, 26(9), 2000, pp. 781-784
Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 mu m wavelength range
Authors: Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE Volovik, BV Zhukov, AE Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 mu m wavelength range, TECH PHYS L, 26(7), 2000, pp. 631-633
Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m
Authors: Tsyrlin, GE Polyakov, NK Egorov, VA Petrov, VN Volovik, BV Sizov, DS Tsatsul'nikov, AF Ustinov, VM
Citation: Ge. Tsyrlin et al., Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 mu m, TECH PHYS L, 26(5), 2000, pp. 423-425
Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy
Authors: Egorov, VA Tsyrlin, GE
Citation: Va. Egorov et Ge. Tsyrlin, Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy, TECH PHYS L, 26(3), 2000, pp. 220-222
Study of multilayer structures with InAs nanoobjects in a silicon matrix
Authors: Petrov, VN Polyakov, NK Egorov, VA Cirlin, GE Zakharov, ND Werner, P Ustinov, VM Denisov, DV Ledentsov, NN Alferov, ZI
Citation: Vn. Petrov et al., Study of multilayer structures with InAs nanoobjects in a silicon matrix, SEMICONDUCT, 34(7), 2000, pp. 810-814
The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m
Authors: Volovik, BV Sizov, DS Tsatsul'nikov, AF Musikhin, YG Ledentsov, NN Ustinov, VM Egorov, VA Petrov, VN Polyakov, NK Tsyrlin, GE
Citation: Bv. Volovik et al., The emission from the structures with arrays of coupled quantum dots grownby the submonolayer epitaxy in the spectral range of 1.3-1.4 mu m, SEMICONDUCT, 34(11), 2000, pp. 1316-1320
1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
Authors: Egorov, VA Cirlin, GE Polyakov, NK Petrov, VN Tonkikh, AA Volovik, BV Musikhin, YG Zhukov, AE Tsatsul'nikov, AF Ustinov, VM
Citation: Va. Egorov et al., 1.3-1.4 mu m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates, NANOTECHNOL, 11(4), 2000, pp. 323-326
Enzyme activation and inactivation induced by low doses of irradiation
Authors: Orlova, MA Kost, OA Gribkov, VA Gazaryan, IG Dubrovsky, AV Egorov, VA Troshina, NN
Citation: Ma. Orlova et al., Enzyme activation and inactivation induced by low doses of irradiation, APPL BIOC B, 88(1-3), 2000, pp. 243-255
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
Authors: Zakharov, ND Werner, P Gosele, U Heitz, R Bimberg, D Ledentsov, NN Ustinov, VM Volovik, BV Alferov, ZI Polyakov, NK Petrov, VN Egorov, VA Cirlin, GE
Citation: Nd. Zakharov et al., Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate, APPL PHYS L, 76(19), 2000, pp. 2677-2679
Description of the activation-inactivation processes in enzymes
Authors: Orlova, MA Egorov, VA
Citation: Ma. Orlova et Va. Egorov, Description of the activation-inactivation processes in enzymes, RUSS CHEM B, 48(4), 1999, pp. 659-662
Effect of growth conditions on InAs nanoislands formation on Si(100) surface
Authors: Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Samsonenko, YB Denisov, DV Busov, VM Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation: Ge. Cirlin et al., Effect of growth conditions on InAs nanoislands formation on Si(100) surface, CZEC J PHYS, 49(11), 1999, pp. 1547-1552
Risultati: 1-16 |