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Results: 1-25/33
Authors:
Lawniczak-Jablonska, K
Iwanowski, RJ
Demchenko, IN
Boettcher, T
Einfeldt, S
Hommel, D
Cortes, R
Perera, RCC
Citation: K. Lawniczak-jablonska et al., Polarization dependent X-ray absorption studies of the chemical bonds anisotropy in wurtzite GaN grown at different conditions, J ALLOY COM, 328(1-2), 2001, pp. 77-83
Authors:
Kasic, A
Schubert, M
Rheinlander, B
Riede, V
Einfeldt, S
Hommel, D
Kuhn, B
Off, J
Scholz, F
Citation: A. Kasic et al., Effective carrier mass and mobility versus carrier concentration in p- andn-type alpha-GaN determined by infrared ellipsometry and Hall resistivity measurements, MAT SCI E B, 82(1-3), 2001, pp. 74-76
Authors:
Schubert, M
Kasic, A
Sik, J
Einfeldt, S
Hommel, D
Harle, V
Off, J
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 178-181
Authors:
Heinke, H
Kirchner, V
Selke, H
Chierchia, R
Ebel, R
Einfeldt, S
Hommel, D
Citation: H. Heinke et al., X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence, J PHYS D, 34(10A), 2001, pp. A25-A29
Authors:
Einfeldt, S
Bottcher, T
Figge, S
Hommel, D
Citation: S. Einfeldt et al., Thermally induced stress in GaN layers with regard to film coalescence, J CRYST GR, 230(3-4), 2001, pp. 357-360
Authors:
Kasic, A
Schubert, M
Kuhn, B
Scholz, F
Einfeldt, S
Hommel, D
Citation: A. Kasic et al., Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN, J APPL PHYS, 89(7), 2001, pp. 3720-3724
Authors:
Einfeldt, S
Heinke, H
Kirchner, V
Hommel, D
Citation: S. Einfeldt et al., Strain relaxation in AlGaN/GaN superlattices grown on GaN, J APPL PHYS, 89(4), 2001, pp. 2160-2167
Authors:
Kruse, C
Einfeldt, S
Bottcher, T
Hommel, D
Citation: C. Kruse et al., In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 79(21), 2001, pp. 3425-3427
Authors:
Kruse, C
Einfeldt, S
Bottcher, T
Hommel, D
Rudloff, D
Christen, J
Citation: C. Kruse et al., Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy, APPL PHYS L, 78(24), 2001, pp. 3827-3829
Authors:
Bottcher, T
Einfeldt, S
Figge, S
Chierchia, R
Heinke, H
Hommel, D
Speck, JS
Citation: T. Bottcher et al., The role of high-temperature island coalescence in the development of stresses in GaN films, APPL PHYS L, 78(14), 2001, pp. 1976-1978
Authors:
Kirchner, V
Heinke, H
Einfeldt, S
Hommel, D
Domagala, JZ
Leszczynski, M
Citation: V. Kirchner et al., Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers, MRS I J N S, 5, 2000, pp. NIL_335-NIL_340
Authors:
Kasic, A
Schubert, M
Einfeldt, S
Hommel, D
Tiwald, TE
Citation: A. Kasic et al., Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry, PHYS REV B, 62(11), 2000, pp. 7365-7377
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Bottcher, T
Einfeldt, S
Hommel, D
Citation: A. Kaschner et al., Evidence for phase separation in InGaN by resonant Raman scattering, PHYS ST S-A, 179(1), 2000, pp. R4-R6
Authors:
Figge, S
Bottcher, T
Einfeldt, S
Hommel, D
Citation: S. Figge et al., In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers, J CRYST GR, 221, 2000, pp. 262-266
Authors:
Selke, H
Kirchner, V
Heinke, H
Einfeldt, S
Ryder, PL
Hommel, D
Citation: H. Selke et al., Polytypism in epitaxially grown gallium nitride, J CRYST GR, 208(1-4), 2000, pp. 57-64
Authors:
Einfeldt, S
Kirchner, V
Heinke, H
Diesselberg, M
Figge, S
Vogeler, K
Hommel, D
Citation: S. Einfeldt et al., Strain relaxation in AlGaN under tensile plane stress, J APPL PHYS, 88(12), 2000, pp. 7029-7036
Authors:
Krtschil, A
Witte, H
Lisker, M
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Scholz, F
Off, J
Stutzmann, M
Citation: A. Krtschil et al., Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy, APPL PHYS L, 77(4), 2000, pp. 546-548
Authors:
Heinke, H
Kirchner, V
Einfeldt, S
Hommel, D
Citation: H. Heinke et al., X-ray diffraction analysis of the defect structure in epitaxial GaN, APPL PHYS L, 77(14), 2000, pp. 2145-2147
Authors:
Kirchner, V
Ebel, R
Heinke, H
Einfeldt, S
Hommel, D
Selke, H
Ryder, PL
Citation: V. Kirchner et al., Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers, MAT SCI E B, 59(1-3), 1999, pp. 47-51
Authors:
Krtschil, A
Lisker, M
Witte, H
Christen, J
Birkle, U
Einfeldt, S
Hommel, D
Citation: A. Krtschil et al., Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy, MAT SCI E B, 59(1-3), 1999, pp. 226-229
Authors:
Selke, H
Amirsawadkouhi, M
Ryder, PL
Bottcher, T
Einfeldt, S
Hommel, D
Bertram, F
Christen, J
Citation: H. Selke et al., Compositional inhomogeneities in InGaN studied by transmission electron microscopy and spatially resolved cathodoluminescence, MAT SCI E B, 59(1-3), 1999, pp. 279-282
Authors:
Kaschner, A
Kaczmarczyk, G
Hoffmann, A
Thomsen, C
Birkle, U
Einfeldt, S
Hommel, D
Citation: A. Kaschner et al., Defect complexes in highly Mg-doped GaN studied by Raman spectroscopy, PHYS ST S-B, 216(1), 1999, pp. 551-555
Authors:
Strauf, S
Michler, P
Gutowski, J
Birkle, U
Fehrer, M
Einfeldt, S
Hommel, D
Citation: S. Strauf et al., Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaNgrown by MBE, PHYS ST S-B, 216(1), 1999, pp. 557-560
Authors:
Krtschil, A
Witte, H
Lisker, M
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Wenzel, A
Rauschenbach, B
Citation: A. Krtschil et al., Incorporation of deep defects in GaN induced by doping and implantation processes, PHYS ST S-B, 216(1), 1999, pp. 587-591
Authors:
Lisker, M
Krtschil, A
Witte, H
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Citation: M. Lisker et al., Influence of carbon doping on the photoconductivity in GaN layers, PHYS ST S-B, 216(1), 1999, pp. 593-597