Authors: Lusky, E Shacham-Diamand, Y Bloom, I Eitan, B

Citation: E. Lusky et al., Characterization of channel hot electron injection by the subthreshold slope of NROM (TM) device, IEEE ELEC D, 22(11), 2001, pp. 556-558

Authors: Bloom, I Pavan, P Eitan, B

Citation: I. Bloom et al., NROM (TM) - a new non-volatile memory technology: from device to products, MICROEL ENG, 59(1-4), 2001, pp. 213-223

Authors: Eitan, B Pavan, P Bloom, I Aloni, E Frommer, A Finzi, D

Citation: B. Eitan et al., NROM: A novel localized trapping, 2-bit nonvolatile memory cell, IEEE ELEC D, 21(11), 2000, pp. 543-545