ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

Triple approach to determination of the c-axis penetration depth in BSCCO crystals

Authors: Trunin, MR Nefyodov, YA Shovkun, DV Zhukov, AA Bontemps, N Buzdin, A Daumens, M Enriquez, H Tamegai, T

Citation: Mr. Trunin et al., Triple approach to determination of the c-axis penetration depth in BSCCO crystals, J SUPERCOND, 14(1), 2001, pp. 181-188

Microwave-induced instability observed in Bi2Sr2CaCu2O8 in a static magnetic field

Authors: De Wilde, Y Enriquez, H Bontemps, N Tamegai, T

Citation: Y. De Wilde et al., Microwave-induced instability observed in Bi2Sr2CaCu2O8 in a static magnetic field, EUROPH LETT, 53(6), 2001, pp. 783-789

Penetration of Josephson vortices and measurement of the c-axis penetration depth in Bi2Sr2CaCu2O8+delta: Interplay of Josephson coupling, surface barrier, and defects - art. no. 144525

Authors: Enriquez, H Bontemps, N Zhukov, AA Shovkun, DV Trunin, MR Buzdin, A Daumens, M Tamegai, T

Citation: H. Enriquez et al., Penetration of Josephson vortices and measurement of the c-axis penetration depth in Bi2Sr2CaCu2O8+delta: Interplay of Josephson coupling, surface barrier, and defects - art. no. 144525, PHYS REV B, 6314(14), 2001, pp. 4525

Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3)

Authors: Amy, F Enriquez, H Soukiassian, P Storino, PF Chabal, YJ Mayne, AJ Dujardin, G Hwu, YK Brylinski, C

Citation: F. Amy et al., Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3), PHYS REV L, 86(19), 2001, pp. 4342-4345

Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer

Authors: Amy, F Enriquez, H Soukiassian, P Brylinski, C Mayne, A Dujardin, G

Citation: F. Amy et al., Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer, APPL PHYS L, 79(6), 2001, pp. 767-769

1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface

Authors: Enriquez, H Derycke, V Aristov, VY Soukiassian, P Le Lay, G di Cioccio, L Cricenti, A Croti, C Ferrari, L Perfetti, P

Citation: H. Enriquez et al., 1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface, APPL SURF S, 162, 2000, pp. 559-564

c-axis penetration depth in Bi2Sr2CaCu2O8+delta single crystals measured by ac-susceptibility and cavity perturbation technique

Authors: Shovkun, DV Trunin, MR Zhukov, AA Nefyodov, YA Bontemps, N Enriquez, H Buzdin, A Daumens, M Tamegai, T

Citation: Dv. Shovkun et al., c-axis penetration depth in Bi2Sr2CaCu2O8+delta single crystals measured by ac-susceptibility and cavity perturbation technique, JETP LETTER, 71(2), 2000, pp. 92-96

Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface

Authors: Aristov, VY Enriquez, H Derycke, V Soukiassian, P Le Lay, G Grupp, C Taleb-Ibrahimi, A

Citation: Vy. Aristov et al., Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface, PHYS REV B, 60(24), 1999, pp. 16553-16557

Vortex-lattice melting, phase slips, and decoupling studied by microwave dissipation in Bi2Sr2CaCu2O8+delta

Authors: Enriquez, H De Wilde, Y Bontemps, N Tamegai, T

Citation: H. Enriquez et al., Vortex-lattice melting, phase slips, and decoupling studied by microwave dissipation in Bi2Sr2CaCu2O8+delta, PHYS REV B, 58(22), 1998, pp. R14745-R14748

Risultati: 1-9 |