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Results: 1-9 |
Results: 9
La doped Ba1-xSrxTiO3 thin films for tunable device applications
Authors: Cole, MW Joshi, PC Ervin, MH
Citation: Mw. Cole et al., La doped Ba1-xSrxTiO3 thin films for tunable device applications, J APPL PHYS, 89(11), 2001, pp. 6336-6340
Alkoxy sol-gel derived Y3-xAl5O12 : Tb-x thin films as efficient cathodoluminescent phosphors
Authors: Choe, JY Ravichandran, D Blomquist, SM Morton, DC Kirchner, KW Ervin, MH Lee, U
Citation: Jy. Choe et al., Alkoxy sol-gel derived Y3-xAl5O12 : Tb-x thin films as efficient cathodoluminescent phosphors, APPL PHYS L, 78(24), 2001, pp. 3800-3802
Thermally stimulated luminescence of SrS : Cu thin films
Authors: Morton, DC Forsythe, EW Sun, SS Wood, MC Ervin, MH Kirchner, K
Citation: Dc. Morton et al., Thermally stimulated luminescence of SrS : Cu thin films, APPL PHYS L, 78(10), 2001, pp. 1400-1402
Preferentially oriented (La,Sr)CoO3/PbLa0.1TiO3/(La,Sr)CoO3 tri-layers on lithium-fluoride and sodium-chloride substrates
Authors: Wu, J Tidrow, SC Tidrow, MZ Ervin, MH Hoffman, RC Tipton, CW Robertson, DN Clark, WW
Citation: J. Wu et al., Preferentially oriented (La,Sr)CoO3/PbLa0.1TiO3/(La,Sr)CoO3 tri-layers on lithium-fluoride and sodium-chloride substrates, INTEGR FERR, 29(1-2), 2000, pp. 103-112
The properties of annealed AlN films deposited by pulsed laser deposition
Authors: Jones, KA Derenge, MA Zheleva, TS Kirchner, KW Ervin, MH Wood, MC Vispute, RD Sharma, RP Venkatesan, T
Citation: Ka. Jones et al., The properties of annealed AlN films deposited by pulsed laser deposition, J ELEC MAT, 29(3), 2000, pp. 262-267
The influence of Mg doping on the materials properties of Ba1-xSrxTiO3 thin films for tunable device applications
Authors: Cole, MW Joshi, PC Ervin, MH Wood, MC Pfeffer, RL
Citation: Mw. Cole et al., The influence of Mg doping on the materials properties of Ba1-xSrxTiO3 thin films for tunable device applications, THIN SOL FI, 374(1), 2000, pp. 34-41
Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
Authors: Cole, MW Joshi, PC Hubbard, CW Wood, MC Ervin, MH Geil, B Ren, F
Citation: Mw. Cole et al., Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications, J APPL PHYS, 88(5), 2000, pp. 2652-2657
Annealing ion implanted SiC with an AlN cap
Authors: Jones, KA Shah, PB Kirchner, KW Lareau, RT Wood, MC Ervin, MH Vispute, RD Sharma, RP Venkatesan, T Holland, OW
Citation: Ka. Jones et al., Annealing ion implanted SiC with an AlN cap, MAT SCI E B, 61-2, 1999, pp. 281-286
1.55 mu m Er-doped GaN LED
Authors: Shen, H Pamulapati, J Taysing, M Wood, MC Lareau, RT Ervin, MH Mackenzie, JD Abernathy, CR Pearton, SJ Ren, F Zavada, JM
Citation: H. Shen et al., 1.55 mu m Er-doped GaN LED, SOL ST ELEC, 43(7), 1999, pp. 1231-1234
Risultati: 1-9 |