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Results:
1-7
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Results: 7
Authors:
Litzenberger, M
Pichler, R
Bychikhin, S
Pogany, D
Gornik, E
Esmark, K
Gossner, H
Citation: M. Litzenberger et al., Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices, MICROEL REL, 41(9-10), 2001, pp. 1385-1390
Authors:
Gossner, H
Muller-Lynch, T
Esmark, K
Stecher, M
Citation: H. Gossner et al., Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology, MICROEL REL, 41(3), 2001, pp. 385-393
Authors:
Esmark, K
Stadler, W
Wendel, M
Gossner, H
Guggenmos, X
Fichtner, W
Citation: K. Esmark et al., Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase, MICROEL REL, 41(11), 2001, pp. 1761-1770
Authors:
Litzenberger, M
Esmark, K
Pogany, D
Furbock, C
Gossner, H
Gornik, E
Fichtner, W
Citation: M. Litzenberger et al., Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry., MICROEL REL, 40(8-10), 2000, pp. 1359-1364
Authors:
Furbock, C
Esmark, K
Litzenberger, M
Pogany, D
Groos, G
Zelsacher, R
Stecher, M
Gornik, E
Citation: C. Furbock et al., Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique, MICROEL REL, 40(8-10), 2000, pp. 1365-1370
Authors:
Pogany, D
Esmark, K
Litzenberger, M
Furbock, C
Gossner, H
Gornik, E
Citation: D. Pogany et al., Bulk and surface degradation mode in 0.35 mu m technology gg-nMOS ESD protection devices., MICROEL REL, 40(8-10), 2000, pp. 1467-1472
Authors:
Meneghesso, G
Zanoni, E
Gerosa, A
Pavan, P
Stadler, W
Esmark, K
Guggenmos, X
Citation: G. Meneghesso et al., Test structures and testing methods for electrostatic discharge: results of PROPHECY project, MICROEL REL, 39(5), 1999, pp. 635-646
Risultati:
1-7
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