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Results:
1-14
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Results: 14
Authors:
GONG Q
WU J
XU B
LIANG JB
FAN TW
WANG ZG
BAI YQ
Citation: Q. Gong et al., ASYMMETRY IN THE VERTICALLY ALIGNED GROWTH INDUCED INAS ISLANDS IN GAAS, Chinese Physics Letters, 15(7), 1998, pp. 519-521
Authors:
WANG HM
FAN TW
WU J
ZENG YP
DONG JR
KONG MY
Citation: Hm. Wang et al., EFFECTS OF GROWTH TEMPERATURE ON HIGHLY MISMATCHED INAS GROWN ON GAASSUBSTRATES BY MBE, Journal of crystal growth, 186(1-2), 1998, pp. 38-42
Authors:
ZOU LF
WANG ZG
SUN DZ
FAN TW
LIU XF
ZHANG JW
Citation: Lf. Zou et al., CHARACTERIZATION OF STRAIN RELAXATION IN AS ION-IMPLANTED SI1-XGEX EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(7), 1998, pp. 845-847
Authors:
WU J
LI HX
FAN TW
WANG ZG
Citation: J. Wu et al., ALIGNMENT OF MISFIT DISLOCATIONS IN THE IN0.52AL0.48AS INXGA1-XAS/IN0.52AL0.48AS/INP HETEROSTRUCTURE/, Applied physics letters, 72(3), 1998, pp. 311-313
Authors:
ZOU LF
WANG ZG
SUN DZ
FAN TW
LIU XF
ZHANG JW
Citation: Lf. Zou et al., DAMAGE REMOVAL AND STRAIN RELAXATION IN AS-IMPLANTED SI0.57GE0.43 EPILAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY(), Chinese Physics Letters, 14(3), 1997, pp. 209-212
Authors:
ZOU LF
WANG ZG
SUN DZ
FAN TW
LIU XF
ZHANG JW
Citation: Lf. Zou et al., DIFFUSION OF ION-IMPLANTED AS IN SI1-XGEX EPILAYERS, Chinese Physics Letters, 14(1), 1997, pp. 51-54
Authors:
ZOU LF
WANG ZG
SUN DZ
FAN TW
LIU XF
ZHANG JW
Citation: Lf. Zou et al., RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SI1-XGEX EPILAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 639-642
Authors:
WANG HM
ZENG YP
FAN TW
ZHOU HW
PAN D
DONG JR
KONG MY
Citation: Hm. Wang et al., CHARACTERISTICS OF INAS EPILAYERS FOR HALL-EFFECT DEVICES GROWN ON GAAS SUBSTRATES BY MBE, Journal of crystal growth, 179(3-4), 1997, pp. 658-660
Authors:
FAN TW
ZOU LF
WANG ZG
HEMMENT PLF
GREAVES SJ
WATTS JF
Citation: Tw. Fan et al., AGGREGATION AND PRECIPITATION IN HIGH-DOSE AS ION-IMPLANTED GE0.5SI0.5 ALLOY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(4), 1996, pp. 510-514
Authors:
LI RG
WANG ZG
LIANG JB
REN GB
FAN TW
LIN LY
Citation: Rg. Li et al., BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of crystal growth, 150(1-4), 1995, pp. 1270-1274
Authors:
WU J
WANG ZG
FAN TW
LIN LY
ZHANG M
Citation: J. Wu et al., SIDEGATING EFFECT ON SCHOTTKY CONTACT IN ION-IMPLANTED GAAS, Journal of applied physics, 78(12), 1995, pp. 7422-7423
Authors:
WU J
LI W
FAN TW
WANG ZG
DUAN XF
Citation: J. Wu et al., BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS GAAS HETEROSTRUCTURE/, Applied physics letters, 67(6), 1995, pp. 846-847
Authors:
FAN TW
NEJIM A
ZHANG JP
WANG ZG
HEMMENT PLF
CHESCOE D
Citation: Tw. Fan et al., PRECIPITATION IN HEAVILY ARSENIC-IMPLANTED GEXSI1-X ALLOYS, Applied physics letters, 66(9), 1995, pp. 1117-1119
Authors:
FAN TW
LIANG JB
DENG HJ
LI RG
WANG ZG
GEN W
Citation: Tw. Fan et al., THERMAL-STABILITY OF LOW-TEMPERATURE-GROWN GAAS, Journal of crystal growth, 143(3-4), 1994, pp. 354-358
Risultati:
1-14
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