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Results:
1-16
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Results: 16
Authors:
FAUX DA
SMITH W
FORESTER TR
Citation: Da. Faux et al., MOLECULAR-DYNAMICS STUDIES OF HYDRATED AND DEHYDRATED NA-ZEOLITE-4A(), JOURNAL OF PHYSICAL CHEMISTRY B, 101(10), 1997, pp. 1762-1768
Authors:
VALSTER A
MENEY AT
DOWNES JR
FAUX DA
ADAMS AR
BROUWER AA
CORBIJN AJ
Citation: A. Valster et al., STRAIN-OVERCOMPENSATED GAINP-ALGAINP QUANTUM-WELL LASER STRUCTURES FOR IMPROVED RELIABILITY AT HIGH-OUTPUT POWERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 180-187
Authors:
DOWNES JR
FAUX DA
Citation: Jr. Downes et Da. Faux, THE FOURIER-SERIES METHOD FOR CALCULATING STRAIN DISTRIBUTIONS IN 2 DIMENSIONS, Journal of physics. Condensed matter, 9(22), 1997, pp. 4509-4520
Authors:
DOWNES JR
DUNSTAN DJ
FAUX DA
Citation: Jr. Downes et al., ANALYSIS OF THE SHORTCOMINGS OF THE MATTHEWS-BLAKESLEE THEORY OF CRITICAL THICKNESS AT HIGHER STRAINS, Philosophical magazine letters, 76(2), 1997, pp. 77-81
Authors:
FAUX DA
DOWNES JR
OREILLY EP
Citation: Da. Faux et al., ANALYTIC SOLUTIONS FOR STRAIN DISTRIBUTIONS IN QUANTUM-WIRE STRUCTURES, Journal of applied physics, 82(8), 1997, pp. 3754-3762
Authors:
DOWNES JR
FAUX DA
OREILLY EP
Citation: Jr. Downes et al., A SIMPLE METHOD FOR CALCULATING STRAIN DISTRIBUTIONS IN QUANTUM-DOT STRUCTURES, Journal of applied physics, 81(10), 1997, pp. 6700-6702
Authors:
FAUX DA
DOWNES JR
OREILLY EP
Citation: Da. Faux et al., A SIMPLE METHOD FOR CALCULATING STRAIN DISTRIBUTIONS IN QUANTUM-WIRE STRUCTURES, Journal of applied physics, 80(4), 1996, pp. 2515-2517
Authors:
DOWNES JR
FAUX DA
OREILLY EP
Citation: Jr. Downes et al., INFLUENCE OF STRAIN RELAXATION ON THE ELECTRONIC-PROPERTIES OF BURIEDQUANTUM-WELLS AND WIRES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 357-363
Authors:
DOWNES J
FAUX DA
Citation: J. Downes et Da. Faux, CALCULATION OF STRAIN DISTRIBUTIONS IN MULTIPLE-QUANTUM-WELL STRAINED-LAYER STRUCTURES, Journal of applied physics, 77(6), 1995, pp. 2444-2447
Authors:
FAUX DA
JONES G
OREILLY EP
Citation: Da. Faux et al., CALCULATION OF STRAIN RELAXATION IN STRAINED-LAYER STRUCTURES - COMPARISON OF ATOMISTIC AND CONTINUUM METHODS, Modelling and simulation in materials science and engineering, 2(1), 1994, pp. 9-20
Authors:
DOWNES JR
DUNSTAN DJ
FAUX DA
Citation: Jr. Downes et al., NUMERICAL-CALCULATION OF EQUILIBRIUM CRITICAL THICKNESS IN STRAINED-LAYER EPITAXY, Semiconductor science and technology, 9(6), 1994, pp. 1265-1267
Authors:
SPJUT H
FAUX DA
Citation: H. Spjut et Da. Faux, COMPUTER-SIMULATION OF STRAIN-INDUCED DIFFUSION ENHANCEMENT OF SI ADATOMS ON THE SI(001) SURFACE, Surface science, 306(1-2), 1994, pp. 233-239
Authors:
BANGERT U
HARVEY AJ
HOWELLS S
FAUX DA
DIEKER C
Citation: U. Bangert et al., STRESS DISTRIBUTIONS AND DEFECT NUCLEATION IN BURIED HETEROSTRUCTURE LASER-DIODES, Journal of applied physics, 75(7), 1994, pp. 3392-3395
Authors:
FAUX DA
GILL J
Citation: Da. Faux et J. Gill, THE 3-DIMENSIONAL FOURIER-SERIES METHOD FOR THE CALCULATION OF STRESSAND STRAIN - APPLICATION TO STRAINED-LAYER STRUCTURES, Journal of applied physics, 75(10), 1994, pp. 4963-4968
Authors:
FAUX DA
Citation: Da. Faux, THE FOURIER-SERIES METHOD FOR THE CALCULATION OF STRAIN RELAXATION INSTRAINED-LAYER STRUCTURES, Journal of applied physics, 75(1), 1994, pp. 186-192
Authors:
FAUX DA
HOWELLS SG
BANGERT U
HARVEY AJ
Citation: Da. Faux et al., STRAIN RELAXATION IN STRAINED BURIED HETEROSTRUCTURE LASERS, Applied physics letters, 64(10), 1994, pp. 1271-1273
Risultati:
1-16
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