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Results: 1-10 |
Results: 10
DLC GROWTH BY ION-BEAM-ASSISTED DEPOSITION - A MOLECULAR SIMULATION
Authors: FEDOTOV SA EFIMCHIK AA BYELI AV
Citation: Sa. Fedotov et al., DLC GROWTH BY ION-BEAM-ASSISTED DEPOSITION - A MOLECULAR SIMULATION, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1638-1642
MODIFICATION OF DIAMOND FILMS BY HIGH-ENERGY ION IRRADIATION - TRACK CHANNELING AND ION CHARGE FLUCTUATION EFFECTS
Authors: FEDOTOV SA BYELI AV ZAITSEV AM VARICHENKO VS KAZYUTCHITS NM
Citation: Sa. Fedotov et al., MODIFICATION OF DIAMOND FILMS BY HIGH-ENERGY ION IRRADIATION - TRACK CHANNELING AND ION CHARGE FLUCTUATION EFFECTS, Thin solid films, 301(1-2), 1997, pp. 183-187
ON CATASTROPHIC CONDITION OF GEOPHYSICAL OBJECTS, TRIGGER ACTION AND PENETRATIONS
Authors: SIMONOV IV FEDOTOV SA KHAVROSHKIN OB
Citation: Iv. Simonov et al., ON CATASTROPHIC CONDITION OF GEOPHYSICAL OBJECTS, TRIGGER ACTION AND PENETRATIONS, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(6), 1996, pp. 811-813
MOLECULAR-DYNAMICS SIMULATION OF STABLE DEFECT FORMATION IN SI VIA COULOMB EXPLOSION
Authors: FEDOTOV SA ISHIMARU M HIROYAMA Y MOTOOKA T ZAITSEV AM
Citation: Sa. Fedotov et al., MOLECULAR-DYNAMICS SIMULATION OF STABLE DEFECT FORMATION IN SI VIA COULOMB EXPLOSION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 724-727
MACRODEFECT FORMATION IN SEMICONDUCTORS DURING HIGH-ENERGY ION-IMPLANTATION - MONTE-CARLO SIMULATION OF DAMAGE DEPTH DISTRIBUTIONS
Authors: FEDOTOV SA VARICHENKO VS ZAITSEV AM ISHIMARU M HIROYAMA Y MOTOOKA T
Citation: Sa. Fedotov et al., MACRODEFECT FORMATION IN SEMICONDUCTORS DURING HIGH-ENERGY ION-IMPLANTATION - MONTE-CARLO SIMULATION OF DAMAGE DEPTH DISTRIBUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 202-205
DIFFUSION OF ELECTRICALLY ACTIVE SB ATOMS IN HEAVILY-DOPED SILICON - MONTE-CARLO SIMULATION WITH REGARD TO COLLECTIVE PHENOMENA
Authors: FEDOTOV SA
Citation: Sa. Fedotov, DIFFUSION OF ELECTRICALLY ACTIVE SB ATOMS IN HEAVILY-DOPED SILICON - MONTE-CARLO SIMULATION WITH REGARD TO COLLECTIVE PHENOMENA, Physica status solidi. b, Basic research, 186(2), 1994, pp. 375-382
A 3RD VOLCANIC CHAIN IN KAMCHATKA - THERMAL ANOMALY AT TRANSFORM CONVERGENCE PLATE BOUNDARY
Authors: TATSUMI Y FURUKAWA Y KOGISO T YAMANAKA Y YOKOYAMA T FEDOTOV SA
Citation: Y. Tatsumi et al., A 3RD VOLCANIC CHAIN IN KAMCHATKA - THERMAL ANOMALY AT TRANSFORM CONVERGENCE PLATE BOUNDARY, Geophysical research letters, 21(7), 1994, pp. 537-540
MODELING THE SIMULTANEOUS PROCESS OF FORM ATION OF SILYCIDES AND HIDDEN INSULATING SI3N4 LAYERS IN THE REGIME OF HIGH-INTENSE ION-IMPLANTATION
Authors: KOMAROV AF KOMAROV FF FEDOTOV SA
Citation: Af. Komarov et al., MODELING THE SIMULTANEOUS PROCESS OF FORM ATION OF SILYCIDES AND HIDDEN INSULATING SI3N4 LAYERS IN THE REGIME OF HIGH-INTENSE ION-IMPLANTATION, Zurnal tehniceskoj fiziki, 64(9), 1994, pp. 136-143
DISTRIBUTION OF IMPLANTED ATOMS AND PHASE TRANSFORMS IN METALS
Authors: BOIKO EB KOMAROV AF KOMAROV FF TARKOVSKII P FEDOTOV SA
Citation: Eb. Boiko et al., DISTRIBUTION OF IMPLANTED ATOMS AND PHASE TRANSFORMS IN METALS, Zurnal tehniceskoj fiziki, 64(6), 1994, pp. 106-112
PENETRATION OF HIGH-ENERGY IONS IN SEMICONDUCTORS THROUGH TRACKS - SIMULATION WITH TRANSPORT-EQUATIONS
Authors: ZAITSEV AM FEDOTOV SA MELNIKOV AA KOMAROV FF FAHRNER WR VARICHENKO VS KAAT EHT
Citation: Am. Zaitsev et al., PENETRATION OF HIGH-ENERGY IONS IN SEMICONDUCTORS THROUGH TRACKS - SIMULATION WITH TRANSPORT-EQUATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 421-430
Risultati: 1-10 |