Authors: MURTHY CS POSSELT M FEUDEL T

Citation: Cs. Murthy et al., PHYSICALLY-BASED MODELING OF 2-DIMENSIONAL AND 3-DIMENSIONAL IMPLANTATION PROFILES - INFLUENCE OF DAMAGE ACCUMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 440-446

Authors: SCHMIDT B POSSELT M STRECKER N FEUDEL T

Citation: B. Schmidt et al., ATOMISTIC SIMULATION OF ION-IMPLANTATION INTO 2D STRUCTURES, Computational materials science, 11(2), 1998, pp. 87-95

Authors: SUZUKI K SUDO R TADA Y TOMOTANI M FEUDEL T FICHTNER W

Citation: K. Suzuki et al., COMPREHENSIVE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED IMPURITY CONCENTRATION PROFILES, Solid-state electronics, 42(9), 1998, pp. 1671-1678

Authors: SUZUKI K SUDO R FEUDEL T

Citation: K. Suzuki et al., SIMPLE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED SB PROFILES USING A JOINED HALF GAUSSIAN FUNCTION AND ONE WITH EXPONENTIAL TAIL, Solid-state electronics, 42(3), 1998, pp. 463-465

Authors: POSSELT M SCHMIDT B MURTHY CS FEUDEL T SUZUKI K

Citation: M. Posselt et al., MODELING OF DAMAGE ACCUMULATION DURING ION-IMPLANTATION INTO SINGLE-CRYSTALLINE SILICON, Journal of the Electrochemical Society, 144(4), 1997, pp. 1495-1504

Authors: HOFLER A FEUDEL T STRECKER N FICHTNER W STEGEMANN KH SYHRE H DALLMANN G

Citation: A. Hofler et al., A TECHNOLOGY ORIENTED MODEL FOR TRANSIENT DIFFUSION AND ACTIVATION OFBORON IN SILICON, Journal of applied physics, 78(6), 1995, pp. 3671-3679