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LIEN Y
PERCIVAL R
HORNUNG M
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FELDGEN T
FIEDERLE M
BENZ KW
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LAASCH M
KUNZ T
FIEDERLE M
MEINHARDT J
BENZ KW
SCHOLZ K
WENDL W
MULLERVOGT G
Citation: W. Joerger et al., COMPENSATION MECHANISM IN VANADIUM AND GALLIUM DOPED CDTE AND (CD,ZN)TE, Crystal research and technology, 32(8), 1997, pp. 1103-1113
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BENZ KW
Citation: M. Laasch et al., GROWTH OF TWIN-FREE CDTE SINGLE-CRYSTALS IN A SEMICLOSED VAPOR-PHASE SYSTEM, Journal of crystal growth, 174(1-4), 1997, pp. 696-707
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CHEN JW
GEPPERT R
KIENZLE M
IRSIGLER R
LUDWIG J
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SCHMID TH
DAVIA C
LAUXTERMANN S
LIU X
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WEBER ER
Citation: M. Rogalla et al., CHARACTERIZATION OF SEMIINSULATING GAAS FOR DETECTOR APPLICATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 14-17
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ROGALLA M
JOERGER C
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Citation: M. Fiederle et al., CHARACTERIZATION OF CDTE0.9SE0.1-CL STRIP DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 153-156
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BENZ KW
Citation: C. Eiche et al., CHARACTERIZATION OF CDTE-CL CRYSTALS GROWN UNDER MICROGRAVITY CONDITIONS BY TIME-DEPENDENT CHARGE MEASUREMENTS (TDCM), Journal of crystal growth, 166(1-4), 1996, pp. 245-250
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EGOROV AV
EBLING DG
BENZ KW
Citation: M. Fiederle et al., RADIATION DETECTOR PROPERTIES OF CDTE0.9SE0.1 CL CRYSTALS GROWN UNDERMICROGRAVITY IN A ROTATING MAGNETIC-FIELD/, Journal of crystal growth, 166(1-4), 1996, pp. 256-260
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EICHE C
JOERGER W
FIEDERLE M
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BENZ KW
Citation: C. Eiche et al., CHARACTERIZATION OF TI AND V DOPED CDTE BY TIME-DEPENDENT CHARGE MEASUREMENT (TDCM) AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS), Optical materials, 4(2-3), 1995, pp. 214-218
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Citation: Jw. Chen et al., EVALUATION OF ACTIVE LAYER PROPERTIES AND CHARGE COLLECTION EFFICIENCY OF GAAS PARTICLE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(2-3), 1995, pp. 273-284
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JOERGER W
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BENZ KW
Citation: R. Schwarz et al., CLOSED TUBE VAPOR GROWTH OF CDTE-V AND CDTE-TI AND ITS CHARACTERIZATION, Journal of crystal growth, 146(1-4), 1995, pp. 92-97
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FIEDERLE M
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SCHWARZ R
BENZ KW
Citation: C. Eiche et al., INVESTIGATION OF CDTE-CL GROWN FROM THE VAPOR-PHASE UNDER MICROGRAVITY CONDITIONS WITH TIME-DEPENDENT CHARGE MEASUREMENTS AND PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY, Journal of crystal growth, 146(1-4), 1995, pp. 98-103
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Citation: M. Fiederle et al., STUDIES OF THE COMPENSATION MECHANISM IN CDTE GROWN FROM THE VAPOR-PHASE, Journal of crystal growth, 146(1-4), 1995, pp. 142-147
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FIEDERLE M
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WEESE J
Citation: D. Maier et al., HIGH-RESOLUTION METHOD FOR THE ANALYSIS OF ADMITTANCE SPECTROSCOPY DATA, Journal of applied physics, 77(8), 1995, pp. 3851-3857
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EGOROV AV
MATIOUKHIN DG
Citation: M. Salk et al., CDTE AND CDTE0.9SE0.1 CRYSTALS GROWN BY THE TRAVELING HEATER METHOD USING A ROTATING MAGNETIC-FIELD, Journal of crystal growth, 138(1-4), 1994, pp. 161-167
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EBLING D
EICHE C
HOFMANN DM
SALK M
STADLER W
BENZ KW
MEYER BK
Citation: M. Fiederle et al., COMPARISON OF CDTE, CD0.9ZN0.1TE AND CDTE0.9SE0.1 CRYSTALS - APPLICATION FOR GAMMA-RAY AND X-RAY-DETECTORS, Journal of crystal growth, 138(1-4), 1994, pp. 529-533