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Results: 1-7 |
Results: 7
A NOVEL SYNTHETIC ROUTE TO ETHER-FREE METAL ALKYL PRECURSORS
Authors: WHITAKER TJ FREER RW MARTIN T JONES AC RUSHWORTH SA
Citation: Tj. Whitaker et al., A NOVEL SYNTHETIC ROUTE TO ETHER-FREE METAL ALKYL PRECURSORS, Journal of electronic materials, 25(7), 1996, pp. 1060-1063
INCREASING THE RANGE OF GROWTH TEMPERATURES AVAILABLE FOR GAAS SELECTIVE-AREA GROWTH USING TRIISOPROPYLGALLIUM AND ARSINE
Authors: WHITAKER TJ MARTIN T FREER RW
Citation: Tj. Whitaker et al., INCREASING THE RANGE OF GROWTH TEMPERATURES AVAILABLE FOR GAAS SELECTIVE-AREA GROWTH USING TRIISOPROPYLGALLIUM AND ARSINE, Journal of crystal growth, 164(1-4), 1996, pp. 296-301
CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM
Authors: FREER RW LANE PA MARTIN T WHITEHOUSE CR WHITAKER TJ WILLIAMS GM CULLIS AG CALCOTT PDJ NASH KD BUCHANNAN H
Citation: Rw. Freer et al., CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM, Journal of applied physics, 79(2), 1996, pp. 917-922
NEW ROUTES TO METAL-ORGANIC PRECURSORS - GROWTH OF HIGH-PURITY ALGAASBY CBE USING A NOVEL AMINE ADDUCT OF TRIISOPROPYLGALLIUM
Authors: FREER RW WHITAKER TJ MARTIN T CALCOTT PDJ HOULTON M LEE D JONES AC RUSHWORTH SA
Citation: Rw. Freer et al., NEW ROUTES TO METAL-ORGANIC PRECURSORS - GROWTH OF HIGH-PURITY ALGAASBY CBE USING A NOVEL AMINE ADDUCT OF TRIISOPROPYLGALLIUM, Advanced materials, 7(5), 1995, pp. 478-481
CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES
Authors: FREER RW MARTIN T LANE PA WHITEHOUSE CR WHITAKER TJ HOULTON M CALCOTT PDJ LEE D RUSHWORTH SA
Citation: Rw. Freer et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES, Journal of crystal growth, 150(1-4), 1995, pp. 539-545
ADVANCES IN THE UNDERSTANDING OF CHEMICAL BEAM EPITAXY GROWTH MECHANISMS
Authors: MARTIN T FREER RW WHITEHOUSE CR LANE PA
Citation: T. Martin et al., ADVANCES IN THE UNDERSTANDING OF CHEMICAL BEAM EPITAXY GROWTH MECHANISMS, Journal of crystal growth, 136(1-4), 1994, pp. 69-77
MECHANISTIC STUDIES OF THE CBE GROWTH OF (100) GAAS USING THE NEW PRECURSOR TRI-ISOPROPYLGALLIUM
Authors: FREER RW MARTIN T LANE PA WHITEHOUSE CR HOGAN R FOORD JS JONES AC
Citation: Rw. Freer et al., MECHANISTIC STUDIES OF THE CBE GROWTH OF (100) GAAS USING THE NEW PRECURSOR TRI-ISOPROPYLGALLIUM, Journal of crystal growth, 127(1-4), 1993, pp. 152-157
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