Authors: WANG H FREIRE JAK FARIAS GA FREIRE VN

Citation: H. Wang et al., INTERFACE-RELATED BAND-BENDING EFFECTS ON INTERSUBBAND TRANSITIONS INDOPED GAAS ALXGA1-XAS SINGLE QUANTUM-WELLS/, Journal of physics. Condensed matter (Print), 10(43), 1998, pp. 9681-9686

Authors: DESOUSA JS FREIRE JAK FARIAS GA FREIRE VN

Citation: Js. Desousa et al., CARRIER TUNNELING AND ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAL ALXGA1-XAS SINGLE BARRIERS/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 55-59

Authors: SHI JM PEETERS FM FARIAS GA FREIRE JAK HAI GQ DEVREESE JT BEDNAREK S ADAMOWSKI J

Citation: Jm. Shi et al., POLARON EFFECT ON D- CENTERS IN WEAKLY POLAR SEMICONDUCTORS, Physical review. B, Condensed matter, 57(7), 1998, pp. 3900-3904

Authors: FREIRE JAK FARIAS GA FREIRE VN

Citation: Jak. Freire et al., ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAS ALXGA1-XAS DOUBLE-QUANTUM-WELL/, Solid state communications, 106(9), 1998, pp. 559-562